Texas instruments incorporated (20240113102). BURIED TRENCH CAPACITOR simplified abstract
Contents
- 1 BURIED TRENCH CAPACITOR
BURIED TRENCH CAPACITOR
Organization Name
texas instruments incorporated
Inventor(s)
Umamaheswari Aghoram of Richardson TX (US)
Guruvayurappan Mathur of Allen TX (US)
Robert Oppen of Phoenix AZ (US)
Tawen Mei of Sunnyvale CA (US)
BURIED TRENCH CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113102 titled 'BURIED TRENCH CAPACITOR
Simplified Explanation
The microelectronic device described in the patent application includes a buried trench capacitor below an electronic component. The capacitor is formed between different regions separated by a dielectric layer, with terminals made through the substrate and a well contact.
- Buried trench capacitor formed between silicon oxide capped p-type buried trench capacitor polysilicon region and buried trench capacitor deep n-type region
- Terminals of the capacitor made through substrate via deep trench substrate contact and well contact
- Dielectric layer separates different regions of the capacitor
Potential Applications
The technology described in the patent application could be used in:
- Microelectronics
- Integrated circuits
- Semiconductor devices
Problems Solved
The technology addresses issues related to:
- Capacitance in microelectronic devices
- Space constraints in electronic components
- Signal processing efficiency
Benefits
The technology offers benefits such as:
- Increased capacitance in a compact space
- Improved performance of electronic components
- Enhanced signal processing capabilities
Potential Commercial Applications
The technology could have commercial applications in:
- Consumer electronics
- Telecommunications
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be the use of trench capacitors in microelectronic devices to increase capacitance in a limited space.
Unanswered Questions
How does this technology compare to traditional capacitor designs in terms of performance and efficiency?
The patent application does not provide a direct comparison between this technology and traditional capacitor designs. Further research or testing may be needed to evaluate the performance and efficiency differences.
What are the potential challenges in implementing this technology on a large scale in manufacturing processes?
The patent application does not address the challenges of large-scale implementation in manufacturing processes. Factors such as cost, scalability, and compatibility with existing technologies could be potential challenges that need to be explored further.
Original Abstract Submitted
a microelectronic device includes a buried trench capacitor below an electronic component of the microelectronic device. in one embodiment, the buried trench capacitor may be formed between a silicon oxide capped p-type buried trench capacitor polysilicon region and a buried trench capacitor deep n-type region separated by buried trench capacitor liner dielectric. in a second embodiment, the buried trench capacitor may be formed by a buried trench capacitor polysilicon region and a p-type silicon epitaxial region separated by a buried trench capacitor liner dielectric. one terminal of the deep trench capacitor is made through the substrate via a deep trench substrate contact. the second terminal of the deep trench capacitor is made via a well contact that connects to the capacitor through a deep well region in one embodiment and through a polysilicon layer in a second embodiment.
