Texas instruments incorporated (20240113095). STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE simplified abstract
Contents
- 1 STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE
Organization Name
texas instruments incorporated
Inventor(s)
Yoshihiro Takei of USHIKU (JP)
Mitsuhiro Sugimoto of TSUKUBA (JP)
Byron Lovell Williams of Plano TX (US)
Jeffrey Alan West of Dallas TX (US)
STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113095 titled 'STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE
Simplified Explanation
The microelectronic device described in the patent application includes an isolation device with a stabilized dielectric, consisting of a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between them. The dielectric sidewall of the inorganic dielectric plateau is stabilized using a nitrogen-containing plasma to form a sionsurface, which reduces moisture ingress into the dielectric stack.
- Lower isolation element
- Upper isolation element
- Inorganic dielectric plateau
- Stabilization of dielectric sidewall with nitrogen-containing plasma
- Reduction of moisture ingress
Potential Applications
The technology could be applied in the manufacturing of microelectronic devices, such as integrated circuits, to improve isolation and reliability.
Problems Solved
The innovation addresses the issue of moisture ingress into the dielectric stack of isolation devices, which can lead to performance degradation and reliability issues in microelectronic devices.
Benefits
- Improved reliability of microelectronic devices - Enhanced isolation performance - Extended lifespan of the devices
Potential Commercial Applications
"Stabilized Dielectric Isolation Device for Microelectronic Applications"
Possible Prior Art
There may be prior art related to dielectric stabilization techniques in microelectronic devices, but specific examples are not provided in the patent application.
Unanswered Questions
How does the technology impact the overall performance of the microelectronic device?
The patent application focuses on moisture ingress reduction, but it does not explicitly mention how this improvement affects the device's performance in terms of speed, power consumption, or other key metrics.
What are the potential challenges in implementing this technology on a large scale in manufacturing processes?
While the patent application describes the technology's benefits, it does not address any potential challenges or limitations that may arise when scaling up production and integrating the innovation into existing manufacturing processes.
Original Abstract Submitted
a microelectronic device including an isolation device with a stabilized dielectric. the isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. the dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a sionsurface on the dielectric sidewall of the inorganic dielectric plateau. the sionsurface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.
