Texas instruments incorporated (20240112953). METAL FILL STRUCTURES FOR ISOLATORS TO MEET METAL DENSITY AND HIGH VOLTAGE ELECTRIC FIELD REQUIREMENTS simplified abstract

METAL FILL STRUCTURES FOR ISOLATORS TO MEET METAL DENSITY AND HIGH VOLTAGE ELECTRIC FIELD REQUIREMENTS

Organization Name

texas instruments incorporated

Inventor(s)

Jeffrey Alan West of Dallas TX (US)

Elizabeth Costner Stewart of Dallas TX (US)

Thomas Dyer Bonifield of Dallas TX (US)

Byron Lovell Williams of Plano TX (US)

Kashyap Barot of Bangalore (IN)

Viresh Chinchansure of Bangalore (IN)

Sreeram N S of Bangalore (IN)

METAL FILL STRUCTURES FOR ISOLATORS TO MEET METAL DENSITY AND HIGH VOLTAGE ELECTRIC FIELD REQUIREMENTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240112953 titled 'METAL FILL STRUCTURES FOR ISOLATORS TO MEET METAL DENSITY AND HIGH VOLTAGE ELECTRIC FIELD REQUIREMENTS

Simplified Explanation

The microelectronic device described in the patent application includes a galvanic isolator with filler metal within an upper isolation element. The galvanic isolator consists of a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between them. The upper isolation element contains tines of filler metal that are electrically connected to each other and to the upper isolation element. The ends of the tines are rounded to reduce electric fields, and the filler metal increases the overall metal density on the metal layer of the upper isolation element to meet modern microelectronic fabrication processing requirements.

• The microelectronic device features a galvanic isolator with filler metal in the upper isolation element.
• The galvanic isolator includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau.
• Tines of filler metal in the upper isolation element are electrically connected to each other and the upper isolation element.
• The ends of the tines are rounded to minimize electric fields.
• The filler metal increases the metal density on the upper isolation element to meet modern fabrication processing requirements.

Potential Applications

The technology described in the patent application could be applied in:

• Microelectronics manufacturing
• Semiconductor devices
• Integrated circuits

Problems Solved

This technology helps to:

• Improve galvanic isolation in microelectronic devices
• Meet metal density requirements in modern fabrication processing

Benefits

The benefits of this technology include:

• Enhanced performance of microelectronic devices
• Increased reliability and efficiency in semiconductor manufacturing

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Electronics industry
• Semiconductor manufacturing companies
• Research and development in microelectronics

Possible Prior Art

One possible prior art for this technology could be:

• Galvanic isolators with filler metal in lower isolation elements

Unanswered Questions

How does this technology compare to traditional galvanic isolators in terms of performance and efficiency?

The article does not provide a direct comparison between this technology and traditional galvanic isolators.

Are there any limitations or drawbacks to implementing this technology in microelectronic devices?

The article does not address any potential limitations or drawbacks of using this technology.

Original Abstract Submitted

a microelectronic device including a galvanic isolator with filler metal within an upper isolation element. the galvanic isolator includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. the upper isolation element contains tines of filler metal which are electrically tied to each other and are electrically tied to the upper isolation element. the ends of the tines are rounded to minimize electric fields. the filler metal increases the overall metal density on the metal layer of the upper isolation element to meet the typical metal density requirements of modern microelectronic fabrication processing.