Texas instruments incorporated (20240112852). FIELD SUPPRESSION FEATURE FOR GALVANIC ISOLATION DEVICE simplified abstract

FIELD SUPPRESSION FEATURE FOR GALVANIC ISOLATION DEVICE

Organization Name

texas instruments incorporated

Inventor(s)

Jeffrey Alan West of Dallas TX (US)

Byron Lovell Williams of Plano TX (US)

Kashyap Barot of Bangalore (IN)

Sreeram N. S. of Bangalore (IN)

Viresh Chinchansure of Bangalore (IN)

FIELD SUPPRESSION FEATURE FOR GALVANIC ISOLATION DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240112852 titled 'FIELD SUPPRESSION FEATURE FOR GALVANIC ISOLATION DEVICE

Simplified Explanation

The microelectronic device described in the patent application includes a galvanic isolation component with a lower winding, an upper isolation element, and a field suppression structure. The field suppression structure contains a conductive field deflector separated from the lower winding by a specific lateral distance, and it is electrically connected to a semiconductor material in a substrate.

• The galvanic isolation component consists of a lower winding and an upper isolation element.
• A field suppression structure is located inside the lower winding and includes a conductive field deflector.
• The conductive field deflector is separated from the lower winding by a specific lateral distance.
• The conductive field deflector is electrically connected to a semiconductor material in a substrate.
• The lower winding is separated from the substrate by a first dielectric layer, and the upper isolation element is separated from the lower winding by a second dielectric layer.

Potential Applications

The technology described in the patent application could be used in:

• Power electronics
• Electric vehicles
• Renewable energy systems

Problems Solved

This technology helps in:

• Preventing electrical interference
• Ensuring safety in electronic devices

Benefits

The benefits of this technology include:

• Improved reliability of electronic devices
• Enhanced performance of power systems

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Electronic manufacturing industry
• Power distribution companies

Possible Prior Art

One possible prior art for this technology could be:

• Galvanic isolation components in electronic devices

Unanswered Questions

How does the lateral distance between the conductive field deflector and the lower winding affect the performance of the galvanic isolation component?

The specific impact of the lateral distance on the functionality of the galvanic isolation component is not clearly explained in the abstract. Further research or detailed analysis may be needed to understand this aspect better.

What are the specific semiconductor materials that can be effectively connected to the conductive field deflector for optimal performance?

The abstract mentions that the conductive field deflector is electrically connected to a semiconductor material in a substrate, but it does not specify the types of semiconductor materials that are most suitable for this connection. Additional information or experimentation may be required to determine the ideal semiconductor materials for this purpose.

Original Abstract Submitted

a microelectronic device includes a galvanic isolation component. the galvanic isolation component includes a lower winding and an upper isolation element over the lower winding. the galvanic isolation component further includes a field suppression structure located interior to the lower winding. the field suppression structure includes a conductive field deflector that is separated from the lower winding by a lateral distance that is half a thickness of the lower winding to twice the thickness of the lower winding. a top surface of the conductive field deflector is substantially coplanar with a bottom surface of the lower winding. the conductive field deflector is electrically connected to a semiconductor material in a substrate. the lower winding is separated from a substrate by a first dielectric layer. the upper isolation element is separated from the lower winding by a second dielectric layer.