Taiwan semiconductor manufacturing company, ltd. (20240138135). MEMORY CELL STRUCTURE simplified abstract
Contents
- 1 MEMORY CELL STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY CELL STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the technology impact the overall performance of memory devices?
- 1.11 What are the potential challenges in implementing this technology on a large scale?
- 1.12 Original Abstract Submitted
MEMORY CELL STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jhon Jhy Liaw of Hsinchu County (TW)
MEMORY CELL STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240138135 titled 'MEMORY CELL STRUCTURE
Simplified Explanation
The memory device described in the patent application includes rectangular and circular/square shaped vias for connecting at least one VSS node. The rectangular shaped via has a length/width of greater than 1.5 and is located on the via0 and/or via1 layer interfacing a first metal layer (e.g., M1). The circular/square shaped vias have a length/width of between approximately 0.8 and 1.2 and are coplanar with the rectangular shaped vias.
- Rectangular and circular/square shaped vias for connecting VSS nodes
- Rectangular shaped via with length/width > 1.5 on via0 and/or via1 layer
- Circular/square shaped vias with length/width between 0.8 and 1.2
- Coplanar arrangement of circular/square shaped vias with rectangular shaped vias
Potential Applications
The technology described in the patent application could be applied in:
- Memory devices
- Integrated circuits
- Semiconductor manufacturing
Problems Solved
The technology addresses the following issues:
- Efficient connection of VSS nodes
- Optimization of space in memory cells
- Enhanced performance of memory devices
Benefits
The technology offers the following benefits:
- Improved connectivity in memory devices
- Higher efficiency in data storage
- Enhanced reliability of semiconductor devices
Potential Commercial Applications
The technology could be utilized in various commercial applications such as:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of traditional circular vias in memory devices. However, the innovation lies in the combination of rectangular and circular/square shaped vias for improved connectivity and space optimization.
Unanswered Questions
How does the technology impact the overall performance of memory devices?
The article does not delve into the specific performance enhancements achieved by the technology. Further research or testing may be needed to quantify the impact on memory device performance.
What are the potential challenges in implementing this technology on a large scale?
The article does not address the potential challenges that may arise when implementing this technology in mass production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be areas of concern that need to be explored further.
Original Abstract Submitted
a memory device including a rectangular shaped via for at least one vss node connection. in some embodiments, the rectangular shaped via has a length/width of greater than 1.5. the rectangular shaped via may be disposed on the via0 and/or via1 layer interfacing a first metal layer (e.g., m1). the memory cell may also include circular/square shaped vias having a length/width of between approximately 0.8 and 1.2. the circular/square shaped vias may be coplanar with the rectangular shaped vias.
