Taiwan semiconductor manufacturing company, ltd. (20240136438). INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES simplified abstract
Contents
INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Fu-Ting Yen of Hsinchu City (TW)
Ting-Ting Chen of New Taipei City (TW)
Keng-Chu Lin of Ping-Tung (TW)
Tsu-Hsiu Perng of Zhubei City (TW)
INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136438 titled 'INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract of the patent application describes a semiconductor device with a porous dielectric feature sandwiched between two semiconductor channel members, with a density smaller than silicon nitride.
- Explanation of the patent/innovation:
- The semiconductor device includes a first and second semiconductor channel member. - A porous dielectric feature containing silicon and nitrogen is placed between the two channel members. - The density of the porous dielectric feature is lower than that of silicon nitride.
Potential applications of this technology: - Advanced semiconductor devices - High-performance electronic components - Energy-efficient devices
Problems solved by this technology: - Improving performance and efficiency of semiconductor devices - Enhancing integration density of components - Reducing power consumption
Benefits of this technology: - Increased device performance - Lower power consumption - Enhanced reliability and durability
Potential commercial applications of this technology: - Semiconductor manufacturing industry - Electronics industry - Research and development in semiconductor technology
Possible prior art: - Prior art related to semiconductor devices with porous dielectric features - Previous patents on semiconductor channel members and dielectric materials
Unanswered questions: 1. What specific manufacturing processes are used to create the porous dielectric feature in the semiconductor device? 2. How does the presence of the porous dielectric feature impact the overall performance and reliability of the semiconductor device?
Original Abstract Submitted
semiconductor devices and methods of forming the same are provided. a semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. in the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.
