Taiwan semiconductor manufacturing company, ltd. (20240136401). PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS simplified abstract

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yin-Kai Liao of Taipei City (TW)

Sin-Yi Jiang of Hsinchu City (TW)

Hsiang-Lin Chen of Hsinchu City (TW)

Yi-Shin Chu of Hsinchu City (TW)

Po-Chun Liu of Hsinchu City (TW)

Kuan-Chieh Huang of Hsinchu City (TW)

Jyh-Ming Hung of Dacun Township (TW)

Jen-Cheng Liu of Hsin-Chu City (TW)

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240136401 titled 'PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

Simplified Explanation

The present disclosure is about an integrated chip with a substrate, first and second semiconductor materials, a passivation layer, doped regions, and a silicide.

• The integrated chip includes a substrate with a first semiconductor material.
• A second semiconductor material is on the first semiconductor material.
• A passivation layer is on the second semiconductor material.
• First and second doped regions extend through the passivation layer and into the second semiconductor material.
• A silicide is arranged within the passivation layer and along the tops of the doped regions.

Potential Applications

This technology could be used in:

• Semiconductor manufacturing
• Integrated circuit design
• Electronics industry

Problems Solved

This technology helps in:

• Improving chip performance
• Enhancing semiconductor device reliability
• Increasing efficiency of electronic devices

Benefits

The benefits of this technology include:

• Higher chip functionality
• Better heat dissipation
• Increased durability of integrated circuits

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Consumer electronics
• Telecommunications
• Automotive industry

Possible Prior Art

One possible prior art for this technology could be:

• Previous integrated chip designs with similar semiconductor materials and structures.

Unanswered Questions

How does this technology compare to existing integrated chip designs?

This technology offers improved performance and reliability compared to existing designs by incorporating specific semiconductor materials and structures.

What are the specific manufacturing processes involved in creating this integrated chip?

The specific manufacturing processes involved in creating this integrated chip include deposition of semiconductor materials, formation of doped regions, passivation layer deposition, and silicide arrangement.

Original Abstract Submitted

the present disclosure relates to an integrated chip. the integrated chip includes a substrate having a first semiconductor material. a second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. a first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. a silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.