Taiwan semiconductor manufacturing company, ltd. (20240136397). HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS simplified abstract
Contents
- 1 HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ming Chyi Liu of Hsinchu City (TW)
HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136397 titled 'HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
Simplified Explanation
The present disclosure describes an integrated chip with various components such as source and drain regions, isolation structures, and gate electrode.
- Source region and drain region are within the substrate, separated from each other.
- Plurality of separate isolation structures are within the substrate, with outermost sidewalls facing each other.
- Gate electrode is within the substrate, with a base region between the source region and isolation structures, and gate extensions extending outward from the base region.
Potential Applications
This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.
Problems Solved
This innovation helps in improving the performance and efficiency of integrated circuits by providing better isolation between different regions and enhancing the control of electrical signals.
Benefits
The integrated chip design described in the patent application offers improved functionality, increased reliability, and potentially lower power consumption for electronic devices.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for manufacturing high-performance integrated circuits, leading to the development of faster and more efficient electronic devices.
Possible Prior Art
One possible prior art could be the use of similar isolation structures and gate electrode configurations in existing integrated circuit designs to improve performance and functionality.
Unanswered Questions
How does this technology compare to existing integrated chip designs in terms of performance and efficiency?
The article does not provide a direct comparison with existing integrated chip designs to evaluate the performance and efficiency improvements offered by this technology.
What are the specific manufacturing processes involved in creating the integrated chip described in the patent application?
The article does not detail the specific manufacturing processes or techniques required to produce the integrated chip with the described components.
Original Abstract Submitted
the present disclosure relates to an integrated chip. the integrated chip includes a source region disposed within a substrate, and a drain region disposed within the substrate and separated from the source region. a plurality of separate isolation structures are disposed within the substrate. the plurality of separate isolation structures have outermost sidewalls that face one another and that are separated from one another. a gate electrode is disposed within the substrate. the gate electrode includes a base region disposed between the source region and the plurality of separate isolation structures and a plurality of gate extensions extending outward from a sidewall of the base region to over the plurality of separate isolation structures.
