Taiwan semiconductor manufacturing company, ltd. (20240136227). Barrier-Free Approach for Forming Contact Plugs simplified abstract
Contents
- 1 Barrier-Free Approach for Forming Contact Plugs
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Barrier-Free Approach for Forming Contact Plugs - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Barrier-Free Approach for Forming Contact Plugs
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sheng-Hsuan Lin of Zhubei City (TW)
Hung-Hsu Chen of Tainan City (TW)
Chih-Wei Chang of Hsinchu (TW)
Barrier-Free Approach for Forming Contact Plugs - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136227 titled 'Barrier-Free Approach for Forming Contact Plugs
Simplified Explanation
The method described in the abstract involves etching a dielectric layer of a substrate to create an opening, depositing a metal layer into the opening, performing an anneal process to form a source/drain region, conducting a plasma treatment process using hydrogen and nitrogen-containing gases to create a silicon-and-nitrogen-containing layer, and finally depositing a metallic material on the layer.
- Etching of dielectric layer to form opening
- Deposition of metal layer into opening
- Anneal process to form source/drain region
- Plasma treatment process with hydrogen and nitrogen-containing gases
- Deposition of metallic material on silicon-and-nitrogen-containing layer
Potential Applications
This technology could be applied in the manufacturing of semiconductor devices, specifically in the fabrication of source/drain regions in transistors.
Problems Solved
This method solves the problem of efficiently forming source/drain regions in semiconductor devices by utilizing a combination of processes to create the desired structure.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, as well as potentially reducing manufacturing costs through optimized processes.
Potential Commercial Applications
"Enhancing Semiconductor Device Performance through Source/Drain Region Formation"
Possible Prior Art
One possible prior art could be the use of similar processes in the fabrication of semiconductor devices, but with variations in the specific materials and methods used.
Unanswered Questions
How does this method compare to existing techniques in terms of efficiency and cost-effectiveness?
The article does not provide a direct comparison with existing techniques in the semiconductor industry.
Are there any limitations or challenges in implementing this method on a larger scale?
The article does not address any potential limitations or challenges that may arise when scaling up this technology for mass production.
Original Abstract Submitted
a method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.
