Taiwan semiconductor manufacturing company, ltd. (20240136220). Shallow Trench Isolation Forming Method and Structures Resulting Therefrom simplified abstract
Contents
- 1 Shallow Trench Isolation Forming Method and Structures Resulting Therefrom
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Shallow Trench Isolation Forming Method and Structures Resulting Therefrom - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Shallow Trench Isolation Forming Method and Structures Resulting Therefrom
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shallow Trench Isolation Forming Method and Structures Resulting Therefrom - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136220 titled 'Shallow Trench Isolation Forming Method and Structures Resulting Therefrom
Simplified Explanation
The method described in the abstract involves forming fins and recesses in different regions of a substrate, then filling the recesses with a dielectric layer that is converted to a treated dielectric layer.
- Formation of fins and recesses in different regions of a substrate
- Filling the recesses with a dielectric layer
- Converting the dielectric layer to a treated dielectric layer
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the fabrication of advanced integrated circuits.
Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by providing a treated dielectric layer in the recesses between fins.
Benefits
- Enhanced performance of integrated circuits - Increased efficiency in semiconductor manufacturing processes
Potential Commercial Applications
Optimizing Dielectric Layers for Advanced Integrated Circuits
Possible Prior Art
There may be prior art related to the formation and treatment of dielectric layers in semiconductor manufacturing processes.
Unanswered Questions
How does the size and depth of the recesses impact the performance of the treated dielectric layer?
The article does not provide specific details on how the dimensions of the recesses affect the properties of the treated dielectric layer.
Are there any specific materials or techniques mentioned for converting the dielectric layer to a treated dielectric layer?
The article does not mention the specific materials or methods used for converting the dielectric layer to a treated dielectric layer.
Original Abstract Submitted
a method includes forming a first plurality of fins in a first region of a substrate, a first recess being interposed between adjacent fins in the first region of the substrate, the first recess having a first depth and a first width, forming a second plurality of fins in a second region of the substrate, a second recess being interposed between adjacent fins in the second region of the substrate, the second recess having a second depth and a second width, the second width of the second recess being less than the first width of the first recess, the second depth of the second recess being less than the first depth of the first recess, forming a first dielectric layer in the first recess and the second recess, and converting the first dielectric layer in the first recess and the second recess to a treated dielectric layer.
