Taiwan semiconductor manufacturing company, ltd. (20240136199). SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the taper structure impact the overall performance of the semiconductor device?
- 1.11 What are the potential challenges in scaling up this manufacturing method for mass production?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wen-Chih Chiou of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136199 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes a semiconductor device and a method for manufacturing it, involving the formation of semiconductor elements with bonding films, creating a taper structure, bonding the elements together, and filling with an oxide layer.
- Formation of first semiconductor element with first bonding film on one side
- Formation of second semiconductor element with second bonding film
- Bonding of first and second semiconductor elements using bonding films
- Filling surrounding area with oxide layer
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, sensors, and microprocessors.
Problems Solved
This technology solves the problem of efficiently bonding semiconductor elements together with a taper structure, which can improve the performance and reliability of semiconductor devices.
Benefits
The benefits of this technology include improved bonding strength between semiconductor elements, enhanced device performance, and increased device reliability due to the unique taper structure design.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance electronic devices for various industries, such as telecommunications, automotive, and consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the use of bonding films in semiconductor manufacturing processes to improve device performance and reliability. Additionally, the concept of taper structures in semiconductor devices may have been explored in previous patents or research studies.
Unanswered Questions
How does the taper structure impact the overall performance of the semiconductor device?
The taper structure created by bonding the semiconductor elements with bonding films may affect the electrical properties and thermal characteristics of the device. Further research and testing are needed to determine the specific impact of the taper structure on device performance.
What are the potential challenges in scaling up this manufacturing method for mass production?
Scaling up the manufacturing method described in the patent application for mass production may pose challenges in terms of cost, efficiency, and quality control. Addressing these challenges will be crucial for commercializing this technology on a larger scale.
Original Abstract Submitted
a semiconductor device and a semiconductor manufacturing method thereof are provided. the semiconductor manufacturing method includes the following streps. a first semiconductor element with a first bonding film is formed. the first bonding film is formed on a first side of the first semiconductor element. the first semiconductor element and the first bonding film form a taper structure. the first bonding film forms a wide portion of the taper structure. the first semiconductor element forms a narrow portion of the taper structure. a second semiconductor element with a second bonding film is formed. the second bonding film is formed on the second semiconductor element. the first semiconductor element and the second semiconductor element are bonded by bonding the first bonding film and the second bonding film. an oxide layer is filled to surround the first semiconductor element and the first bonding film.
