Taiwan semiconductor manufacturing company, ltd. (20240136191). FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
Contents
- 1 FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Min-Hsiu Hung of Tainan City (TW)
Yi-Hsiang Chao of New Taipei City (TW)
Chih-Wei Chang of Hsinchu (TW)
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136191 titled 'FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The method described in the patent application involves forming source/drain regions on opposing sides of a gate structure, which is positioned over a fin and surrounded by a first dielectric layer. Openings are then created in the first dielectric layer to expose the source/drain regions. Silicide regions are selectively formed in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process, and the openings are filled with an electrically conductive material.
- Formation of source/drain regions on opposing sides of a gate structure
- Use of a plasma-enhanced chemical vapor deposition (PECVD) process to selectively form silicide regions
- Filling of openings with an electrically conductive material
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the conductivity of the source/drain regions.
Benefits
The method allows for precise and controlled formation of silicide regions, leading to improved electrical properties and overall device performance.
Potential Commercial Applications
The technology could find applications in the production of cutting-edge electronic devices, particularly in the semiconductor industry.
Possible Prior Art
One possible prior art could be the use of conventional methods for forming silicide regions in semiconductor devices, which may not offer the same level of precision and control as the PECVD process described in this patent application.
Unanswered Questions
1. What specific types of semiconductor devices could benefit the most from this technology? 2. How does the use of silicide regions impact the overall cost of manufacturing semiconductor devices?
Original Abstract Submitted
a method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (pecvd) process; and filling the openings with an electrically conductive material.
