Taiwan semiconductor manufacturing company, ltd. (20240135983). Write Driver Boost Circuit for Memory Cells simplified abstract

Write Driver Boost Circuit for Memory Cells

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Sanjeev Kumar Jain of Ottawa (CA)

Write Driver Boost Circuit for Memory Cells - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240135983 titled 'Write Driver Boost Circuit for Memory Cells

Simplified Explanation

The abstract describes a boost circuit for generating a boost voltage for a write operation of a memory cell. The circuit includes inverters, a transistor, and a capacitor to provide the necessary voltage to a write driver.

• The boost circuit includes a first inverter and a second inverter to invert the write signal.
• A transistor is coupled to the output of the first inverter to charge a capacitor based on the write signal and provide a supply voltage to a write driver.
• The capacitor, coupled to the output of the second inverter, generates and provides a delta voltage to the write driver.

Potential Applications

This technology can be applied in various memory devices, such as DRAM, SRAM, or flash memory, to enhance the efficiency of write operations.

Problems Solved

This technology solves the problem of efficiently generating a boost voltage for a write operation in memory cells, improving overall performance and reliability.

Benefits

The benefits of this technology include increased speed and reliability of write operations in memory cells, leading to improved overall performance of memory devices.

Potential Commercial Applications

This technology can be utilized in the semiconductor industry for memory devices, potentially improving the competitiveness of products in the market.

Possible Prior Art

One possible prior art could be boost circuits used in memory devices, but the specific configuration described in this patent application may be novel and inventive.

How does this boost circuit compare to existing solutions in terms of efficiency and performance?

The article does not provide a direct comparison with existing solutions, leaving room for further analysis and evaluation of the technology's advantages.

What are the potential challenges in implementing this boost circuit in practical memory devices?

The article does not address the challenges or limitations that may arise during the implementation of this technology, which could be crucial for understanding its real-world applicability.

Original Abstract Submitted

circuits, systems, and methods are described herein for generating a boost voltage for a write operation of a memory cell. in one embodiment, a boost circuit includes a first inverter and a second inverter, each configured to invert a write signal. the boost circuit also includes a transistor and a capacitor. the transistor is coupled to an output of the first inverter. the transistor is configured to charge a capacitor based on the write signal and provide a supply voltage to a write driver. the capacitor is coupled to an output of the second inverter. the capacitor is configured to generate and provide a delta voltage to the write driver.