Taiwan semiconductor manufacturing company, ltd. (20240136280). Conductive Traces in Semiconductor Devices and Methods of Forming Same simplified abstract
Contents
- 1 Conductive Traces in Semiconductor Devices and Methods of Forming Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Conductive Traces in Semiconductor Devices and Methods of Forming Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Conductive Traces in Semiconductor Devices and Methods of Forming Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chao-Wen Shih of Zhubei City (TW)
Sen-Kuei Hsu of Kaohsiung City (TW)
Conductive Traces in Semiconductor Devices and Methods of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136280 titled 'Conductive Traces in Semiconductor Devices and Methods of Forming Same
Simplified Explanation
The method described in the abstract involves the formation of a dielectric layer, polymer layers, conductive lines, and patterning of photoresist to create openings for conductive lines to physically contact each other.
- Dielectric layer formed over a contact pad of a device
- First polymer layer formed over the dielectric layer
- First conductive line and a first portion of a second conductive line formed over the first polymer layer
- Patterning of photoresist to create an opening over the first portion of the second conductive line
- Second portion of the second conductive line formed in the opening, physically contacting the first portion
- Second polymer layer formed over the first conductive line and the second portion of the second conductive line
Potential Applications
This technology could be applied in semiconductor manufacturing, specifically in the fabrication of integrated circuits and electronic devices.
Problems Solved
This method helps in creating reliable and efficient electrical connections between different conductive lines in a device, ensuring proper functionality and performance.
Benefits
The method allows for precise patterning and formation of conductive lines, leading to improved electrical conductivity and overall device reliability.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of advanced electronic devices such as smartphones, tablets, and computers.
Possible Prior Art
Prior art in this field may include similar methods for forming conductive lines and patterning photoresist in semiconductor manufacturing processes.
Unanswered Questions
How does this method compare to existing techniques in terms of cost-effectiveness and efficiency?
This article does not provide information on the cost-effectiveness and efficiency of this method compared to existing techniques.
What are the specific materials used in each layer of the process and how do they contribute to the overall performance of the device?
The article does not delve into the specific materials used in each layer of the process and their impact on device performance.
Original Abstract Submitted
a method includes forming a dielectric layer over a contact pad of a device, forming a first polymer layer over the dielectric layer, forming a first conductive line and a first portion of a second conductive line over the first polymer layer, patterning a photoresist to form an opening over the first portion of the second conductive feature, wherein after patterning the photoresist the first conductive line remains covered by photoresist, forming a second portion of the second conductive line in the opening, wherein the second portion of the second conductive line physically contacts the first portion of the second conductive line, and forming a second polymer layer extending completely over the first conductive line and the second portion of the second conductive line.
- Taiwan semiconductor manufacturing company, ltd.
- Chao-Wen Shih of Zhubei City (TW)
- Chen-Hua Yu of Hsinchu (TW)
- Han-Ping Pu of Taichung (TW)
- Hsin-Yu Pan of Taipei (TW)
- Hao-Yi Tsai of Hsinchu (TW)
- Sen-Kuei Hsu of Kaohsiung City (TW)
- H01L23/525
- H01L21/56
- H01L23/00
- H01L23/29
- H01L23/31
- H01L23/522
- H01L23/532
- H01L23/552