Taiwan semiconductor manufacturing company, ltd. (20240120414). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Hung Hsieh of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120414 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes a semiconductor device structure with various layers and features, including a semiconductor layer, an epitaxial feature, dielectric layers, and a contact etch stop layer.
- The structure includes a semiconductor layer on a substrate, with an epitaxial feature electrically connected to one end of the semiconductor layer.
- A dielectric layer is in contact with the other end of the semiconductor layer, and a contact etch stop layer is on top of the dielectric layer.
- An interlayer dielectric layer is then on top of the contact etch stop layer.
Potential Applications
This technology could be used in the development of advanced semiconductor devices for various applications such as integrated circuits, sensors, and communication devices.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing a more efficient and reliable structure for electrical connections and signal transmission.
Benefits
The benefits of this technology include enhanced electrical connectivity, improved signal transmission, increased device performance, and overall reliability of semiconductor devices.
Potential Commercial Applications
Potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, telecommunications, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of similar semiconductor device structures with different configurations and materials to achieve similar results in terms of electrical connectivity and signal transmission.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
This article does not provide a direct comparison with existing structures to evaluate the performance and reliability improvements offered by this technology.
What are the specific manufacturing processes involved in forming these semiconductor device structures?
The article does not detail the specific manufacturing processes or techniques used to fabricate the semiconductor device structures described.
Original Abstract Submitted
embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. the structure includes a semiconductor layer disposed over a substrate, and the semiconductor layer has a first end and a second end opposite the first end. the structure further includes an epitaxial feature disposed over the substrate, and the epitaxial feature is electrically connected to the first end of the semiconductor layer. the structure further includes a first dielectric layer disposed over the substrate, and the first dielectric layer is in contact with the second end of the semiconductor layer. the structure further includes a contact etch stop layer disposed on and in contact with the first dielectric layer and an interlayer dielectric layer disposed on and in contact with the contact etch stop layer.
