Taiwan semiconductor manufacturing company, ltd. (20240120334). SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsin-Che Chiang of Taipei City (TW)
Jeng-Ya Yeh of New Taipei City (TW)
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120334 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a method for forming a semiconductor device structure, involving the formation of various layers and trenches to create a gate electrode.
- Formation of isolation layer over substrate
- Formation of spacer layer over fins and isolation layer
- Formation of gate dielectric layer in trench
- Partial removal of gate dielectric layer to form second trench
- Formation of gate electrode in first trench
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This technology solves the problem of efficiently creating a gate electrode in a semiconductor device structure, improving performance and reliability.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency in manufacturing processes, and improved overall device reliability.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance electronic devices for various industries, such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods in the fabrication of semiconductor devices, such as FinFET transistors.
Unanswered Questions
How does this method compare to existing techniques for forming gate electrodes in semiconductor devices?
This article does not provide a direct comparison to existing techniques, leaving the reader to wonder about the specific advantages and disadvantages of this new method.
What are the specific performance improvements that can be expected from implementing this technology in semiconductor device manufacturing?
The article does not delve into the specific performance enhancements that can be achieved by using this method, leaving room for further exploration into the potential benefits of this innovation.
Original Abstract Submitted
a method for forming a semiconductor device structure is provided. the method includes forming an isolation layer over a substrate. the method includes forming a spacer layer over the first fin, the second fin, and the isolation layer. the method includes forming a gate dielectric layer in the first trench and covering the first fin, the second fin, and the isolation layer exposed by the first trench. the method includes partially removing the gate dielectric layer to form a second trench in the gate dielectric layer and between the first fin and the second fin. the method includes forming a gate electrode in the first trench of the spacer layer and over the gate dielectric layer.
