Taiwan semiconductor manufacturing company, ltd. (20240120273). DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS simplified abstract
Contents
DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120273 titled 'DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS
Simplified Explanation
The abstract describes a device with multiple stacks of semiconductor nanostructures, gate structures, gate isolation structure, dielectric layer, and a via.
- The device includes a first stack of first semiconductor nanostructures.
- A second stack of second semiconductor nanostructures is on top of the first stack.
- A third stack of first semiconductor nanostructures is adjacent to the first stack.
- A first gate structure wraps around the first and second stacks.
- A second gate structure wraps around the third stack.
- A gate isolation structure separates the first and second gate structures.
- A dielectric layer is on top of the second gate structure and abuts the gate isolation structure.
- A via includes a first portion on the first gate structure, gate isolation structure, and dielectric layer, and a second portion extending in a transverse direction.
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- Potential Applications
This technology could be applied in advanced semiconductor devices, high-performance transistors, and integrated circuits.
- Problems Solved
This innovation solves the problem of improving the performance and efficiency of semiconductor devices by optimizing the structure and functionality of the components.
- Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially lower power consumption in electronic devices.
- Potential Commercial Applications
Potential commercial applications of this technology could be in the semiconductor industry, electronics manufacturing, and research and development of cutting-edge technologies.
- Possible Prior Art
One possible prior art could be the development of similar semiconductor structures with multiple stacks and gate structures in the field of nanoelectronics.
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- Unanswered Questions
- How does this technology compare to existing semiconductor structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor structures to evaluate the performance and efficiency improvements.
- What are the specific manufacturing processes involved in creating this device and how cost-effective are they?
The article does not delve into the detailed manufacturing processes or the cost-effectiveness of producing this device.
Original Abstract Submitted
a device includes: a first stack of first semiconductor nanostructures; a second stack of second semiconductor nanostructures on the first stack of semiconductor nanostructures; a third stack of first semiconductor nanostructures adjacent the first stack; a first gate structure wrapping around the first stack and the second stack; a second gate structure wrapping around the third stack; a gate isolation structure between the first gate structure and the second gate structure; a dielectric layer on the second gate structure and laterally abutting the gate isolation structure; and a via. the via includes: a first portion that extends in a first direction, the first portion being on the first gate structure, the gate isolation structure and the dielectric layer; and a second portion that extends in a second direction transverse the first direction.
