MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240120239 titled 'MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES

Simplified Explanation

The abstract describes a method for modulating the threshold voltage of a device by providing a fin with semiconductor channel layers for a p-type transistor, forming a gate dielectric layer, and a p-type metal film, followed by annealing and removing the metal film.

Explanation of the patent:

  - Method for modulating threshold voltage of a device
  - Utilizes a fin with semiconductor channel layers for a p-type transistor
  - Forms a gate dielectric layer surrounding the semiconductor channel layers
  - Adds a p-type metal film around the gate dielectric layer
  - Anneals the semiconductor device
  - Removes the p-type metal film

Potential applications of this technology:

  - Semiconductor devices
  - Integrated circuits
  - Transistors

Problems solved by this technology:

  - Modulating threshold voltage of a device
  - Enhancing performance of semiconductor devices
  - Improving efficiency of integrated circuits

Benefits of this technology:

  - Increased control over device threshold voltage
  - Enhanced device performance
  - Improved reliability and stability

Potential commercial applications of this technology:

  - Electronics industry
  - Semiconductor manufacturing companies
  - Research and development in semiconductor technology

Possible prior art:

  - Prior methods of modulating threshold voltage in semiconductor devices
  - Previous techniques for enhancing transistor performance

Questions:

1. How does the method of forming a gate dielectric layer impact the threshold voltage modulation process? 2. What are the specific materials used in the p-type metal film and how do they contribute to the modulation of the threshold voltage?

Original Abstract Submitted

a method for modulating a threshold voltage of a device. the method includes providing a fin extending from a substrate, where the fin includes a plurality of semiconductor channel layers defining a channel region for a p-type transistor. in some embodiments, the method further includes forming a first gate dielectric layer surrounding at least three sides of each of the plurality of semiconductor channel layers of the p-type transistor. thereafter, the method further includes forming a p-type metal film surrounding the first gate dielectric layer. in an example, and after forming the p-type metal film, the method further includes annealing the semiconductor device. after the annealing, and in some embodiments, the method includes removing the p-type metal film.

Taiwan semiconductor manufacturing company, ltd. (20240120239). MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES simplified abstract

Contents

MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES

Organization Name

Inventor(s)