Taiwan semiconductor manufacturing company, ltd. (20240120203). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Te-Chih Hsiung of Taipei City (TW)

Yun-Hua Chen of Hsinchu County (TW)

Bing-Sian Wu of Hsinchu City (TW)

Yi-Hsuan Chiu of Hsinchu City (TW)

Yu-Wei Chang of Hsinchu City (TW)

Wen-Kuo Hsieh of Taipei City (TW)

Chih-Yuan Ting of Taipei City (TW)

Huan-Just Lin of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240120203 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The method described in the patent application involves a process for fabricating a semiconductor device with improved source/drain contacts. Here is a simplified explanation of the abstract:

• Form a dummy gate over a semiconductor fin.
• Form a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate.
• Deposit an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure.
• Replace the dummy gate with a gate structure.
• Form a dielectric structure to cut the gate structure, with a portion embedded in the ILD layer.
• Recess the portion of the dielectric structure embedded in the ILD layer.
• Remove a portion of the ILD layer over the source/drain epitaxial structure.
• Form a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

1. 1. 1. Potential Applications

- This technology can be applied in the semiconductor industry for manufacturing advanced semiconductor devices with improved source/drain contacts.

1. 1. 1. Problems Solved

- The method addresses the challenge of forming reliable source/drain contacts in semiconductor devices, which is crucial for device performance and reliability.

1. 1. 1. Benefits

- Enhanced source/drain contacts lead to improved device performance, efficiency, and reliability. - The process allows for precise control and integration of various components in semiconductor devices.

1. 1. 1. Potential Commercial Applications

- The technology can be utilized in the production of high-performance integrated circuits, microprocessors, and other semiconductor devices.

1. 1. 1. Possible Prior Art

- One possible prior art could be the use of different methods for forming source/drain contacts in semiconductor devices, such as traditional deposition and etching techniques.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this method compare to existing techniques for forming source/drain contacts in semiconductor devices?

- The article does not provide a direct comparison with existing techniques, leaving the reader to wonder about the specific advantages and limitations of this new method.

1. 1. 1. 1. What are the specific performance improvements achieved by implementing this method in semiconductor device fabrication?

- The article does not delve into the specific performance enhancements resulting from the use of this technology, leaving a gap in understanding the full impact of the innovation.

Original Abstract Submitted

a method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ild) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ild layer; recessing the portion of the dielectric structure embedded in the ild layer; after recessing the portion of the dielectric structure, removing a portion of the ild layer over the source/drain epitaxial structure; and forming a source/drain contact in the ild layer and in contact with the portion of the dielectric structure.