Taiwan semiconductor manufacturing company, ltd. (20240113214). SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuan-Ting Pan of Taipei City (TW)
Wei-Yang Lee of Taipei City (TW)
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113214 titled 'SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor structure described in the abstract includes a unique configuration of suspended channel members, gate structure, dielectric structure with porous material or air gap, and epitaxial layer with extending portion.
- The semiconductor structure features a first channel member suspended over a substrate, with a second channel member suspended over the first channel member and spaced apart along a first direction.
- A gate structure wraps around the first and second channel members, while a dielectric structure encircled by the channel members, gate structure, and source/drain structure contains a porous material or air gap.
- A first epitaxial layer attached to the first channel member has a protruding extending portion into the dielectric structure from the bottom surface of the first channel member along the first direction.
Potential Applications
The semiconductor structure with suspended channel members and unique dielectric structure could be applied in advanced semiconductor devices, such as high-performance transistors, sensors, and memory devices.
Problems Solved
This technology addresses challenges in improving semiconductor device performance, reducing power consumption, and enhancing overall device efficiency by optimizing the structure and materials used in the fabrication process.
Benefits
The benefits of this technology include increased device speed, reduced power consumption, improved reliability, and enhanced functionality for various semiconductor applications.
Potential Commercial Applications
Potential commercial applications of this technology could include the development of next-generation processors, memory chips, sensors for IoT devices, and other advanced semiconductor products.
Possible Prior Art
One possible prior art could be the use of suspended channel structures in semiconductor devices, but the specific configuration with the unique dielectric structure containing porous material or air gap and the extending epitaxial layer may be novel and inventive.
Unanswered Questions
How does this semiconductor structure compare to existing technologies in terms of performance and efficiency?
This article does not provide a direct comparison with existing technologies to evaluate the performance and efficiency improvements offered by the described semiconductor structure.
What are the potential challenges or limitations in scaling up the production of semiconductor devices using this technology?
The article does not address the potential challenges or limitations that may arise when scaling up the production of semiconductor devices incorporating this innovative structure.
Original Abstract Submitted
semiconductor structures and methods for manufacturing the same are provided. the semiconductor structure includes a first channel member suspended over a substrate and a second channel member suspended over the first channel member and spaced apart from the first channel member along a first direction. the semiconductor structure also includes a gate structure wrapping around the first channel member and the second channel member and a dielectric structure encircled by the first channel member, the second channel member, the gate structure, and the source/drain structure. in addition, the dielectric structure includes a porous material or an air gap. the semiconductor structure also includes a first epitaxial layer attached to the first channel member, and the first epitaxial layer has a first extending portion protruding from a bottom surface of the first channel member along the first direction and extending into the dielectric structure.
