Taiwan semiconductor manufacturing company, ltd. (20240113172). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tzu-Chiang Chen of Changhua County (TW)
Chao-Ching Cheng of Hsinchu City (TW)
Iuliana Radu of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113172 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor device described in the abstract includes a substrate, a channel layer, a gate structure, source/drain regions, and an insulating layer. The channel layer is on top of the substrate, with the gate structure on top of the channel layer. The source/drain regions are located on the substrate at opposite sides of the channel layer, with the insulating layer between the channel layer and the source/drain regions.
- The substrate provides a foundation for the semiconductor device.
- The channel layer serves as the pathway for electrical current.
- The gate structure controls the flow of current through the channel layer.
- The source/drain regions facilitate the input and output of current.
- The insulating layer prevents interference between the channel layer and the source/drain regions.
Potential Applications
This technology could be applied in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved
This technology helps address issues related to:
- Electrical interference
- Heat dissipation
- Signal loss
Benefits
The benefits of this technology include:
- Improved performance
- Enhanced reliability
- Increased efficiency
Potential Commercial Applications
A potential commercial application for this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology is:
- Metal-oxide-semiconductor field-effect transistors (MOSFETs)
Unanswered Questions
How does this technology compare to existing semiconductor devices?
This article does not provide a direct comparison to existing semiconductor devices, leaving the reader to wonder about the specific advantages and disadvantages of this new technology.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not delve into the detailed manufacturing processes required to produce this semiconductor device, leaving the reader curious about the intricacies of its production.
Original Abstract Submitted
a semiconductor device includes a substrate, a channel layer, a gate structure, source/drain regions, and an insulating layer. the channel layer is disposed over the substrate. the gate structure is disposed over the channel layer. the source/drain regions are disposed over the substrate and disposed at two opposite sides of the channel layer. the insulating layer is disposed between the channel layer and the source/drain regions.
