Taiwan semiconductor manufacturing company, ltd. (20240113166). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Tzu-Ging Lin of Hsinchu City (TW)

Chun-Liang Lai of Hsinchu City (TW)

Yun-Chen Wu of Hsinchu City (TW)

Ya-Yi Tsai of Hsinchu City (TW)

Shu-Yuan Ku of Hsinchu City (TW)

Shun-Hui Yang of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113166 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The abstract describes a method for fabricating semiconductor devices involving the formation of channel regions over a substrate, gate structure formation, and etching processes to remove portions of the gate structure, channel regions, and substrate.

• The method involves forming channel regions with epitaxial structures extending along a first lateral direction.
• A gate structure is formed over the channel regions, extending along a second lateral direction.
• Portions of the gate structure and channel regions are removed through specific etching processes.
• The etching processes include silicon etching, silicon oxide deposition, and pulse signal controlled etching of the substrate.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.

Problems Solved

This method allows for precise control and manipulation of the semiconductor device structure, enabling the fabrication of high-performance and reliable devices with improved functionality.

Benefits

The method offers enhanced device performance, increased efficiency in manufacturing processes, and the potential for developing next-generation semiconductor devices with advanced features.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for producing cutting-edge electronic components with superior performance and reliability.

Possible Prior Art

Prior art may include similar methods for fabricating semiconductor devices using etching processes and epitaxial structures, but the specific combination of steps described in this patent application may be novel.

How does this method compare to existing semiconductor fabrication techniques?

This method offers a unique approach to fabricating semiconductor devices, but it would be beneficial to compare its efficiency, cost-effectiveness, and performance with traditional methods.

What are the potential challenges or limitations of implementing this fabrication process on an industrial scale?

While the method shows promise for producing advanced semiconductor devices, there may be challenges in scaling up the process for mass production, ensuring uniformity, and optimizing manufacturing costs.

Original Abstract Submitted

a method for fabricating semiconductor devices includes forming channel regions over a substrate. the channel regions, in parallel with one another, extend along a first lateral direction. each channel region includes at least a respective pair of epitaxial structures. the method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. the method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. the method includes removing, through a second etching process, a portion of the first channel region. the second etching process includes one silicon etching process and one silicon oxide deposition process. the method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.