Taiwan semiconductor manufacturing company, ltd. (20240113121). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ming-Heng Tsai of Hsinchu (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113121 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device with multiple regions and structures, including transistors and a nanosheet structure. The device is designed to improve performance and efficiency in electronic applications.
- The semiconductor device includes a first well region with a first conductivity type, a second well region with a second conductivity type, a cell, and a pickup tap cell.
- The cell features a first forksheet structure, which includes a first transistor over the first well region, a second transistor over the second well region, and a first wall structure along the interface between the two well regions.
- The pickup tap cell includes a nanosheet structure with a pickup transistor over the second well region.
- Source/drain features of the transistors have different conductivity types to optimize performance.
Potential Applications
This semiconductor device could be used in various electronic devices such as smartphones, tablets, laptops, and other portable electronics where high performance and efficiency are crucial.
Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by utilizing innovative structures and designs to enhance functionality.
Benefits
The benefits of this technology include increased performance, efficiency, and reliability in electronic devices. It also allows for smaller and more compact designs, making it ideal for portable electronics.
Potential Commercial Applications
The semiconductor device could be commercialized for use in consumer electronics, automotive applications, industrial equipment, and other electronic devices where advanced semiconductor technology is required.
Possible Prior Art
One possible prior art could be the use of nanosheet structures in semiconductor devices to improve performance and efficiency. Another could be the integration of different conductivity types in source/drain features to optimize device functionality.
Unanswered Questions
How does the first wall structure impact the performance of the transistors in the semiconductor device?
The first wall structure plays a crucial role in separating the first and second well regions, but its specific impact on transistor performance is not explicitly mentioned in the abstract. Further research or experimentation may be needed to fully understand its influence.
What are the specific applications where the pickup tap cell with a nanosheet structure would be most beneficial?
While the abstract mentions the pickup tap cell with a nanosheet structure, it does not provide specific examples of applications where this feature would be particularly advantageous. Exploring different use cases and scenarios could help identify the optimal applications for this technology.
Original Abstract Submitted
semiconductor devices are provided. a semiconductor device includes a first well region having a first conductivity type, a second well region having a second conductivity type, a cell, and a pickup tap cell. the cell includes a first forksheet structure. the first forksheet structure includes a first transistor formed over the first well region, a second transistor formed over the second well region, and a first wall structure disposed on and extending along an interface between the first and second well regions. the first transistor and the second transistor are disposed on opposite sides of the first wall structure. the pickup tap cell includes a nanosheet structure. the nanosheet structure includes a pickup transistor formed over the second well region. source/drain features of the first transistor and the pickup transistor have the second conductivity type, and source/drain features of the second transistor have the first conductivity type.
