Taiwan semiconductor manufacturing company, ltd. (20240113011). Semiconductor Structures And Methods Of Forming The Same simplified abstract
Contents
- 1 Semiconductor Structures And Methods Of Forming The Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Structures And Methods Of Forming The Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Semiconductor Structures And Methods Of Forming The Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wen-Chiung Tu of New Taipei City (TW)
Chen-Chiu Huang of Taichung City (TW)
Hsiang-Ku Shen of Hsinchu City (TW)
Semiconductor Structures And Methods Of Forming The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113011 titled 'Semiconductor Structures And Methods Of Forming The Same
Simplified Explanation
The patent application describes a method for forming metal features in semiconductor structures, specifically focusing on the shape of the metal features.
- The method involves forming a first conductive feature in a dielectric layer.
- A metal-insulator-metal (MIM) capacitor is then formed over the dielectric layer.
- A first passivation structure is applied over the MIM capacitor.
- A first contact via opening is created to expose the first conductive feature.
- A conductive material is deposited to fill the first contact via opening.
- A first etching process is performed to form a first metal feature, with a portion filling the contact via opening and another portion over the passivation structure.
- A second etching process is then done to trim the second portion of the first metal feature, resulting in a barrel shape.
Potential Applications
This technology can be applied in the semiconductor industry for the manufacturing of advanced electronic devices such as integrated circuits and memory chips.
Problems Solved
This method solves the challenge of forming precise metal features in semiconductor structures, ensuring proper electrical connections and signal transmission within the devices.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, as well as increased efficiency in the manufacturing process.
Potential Commercial Applications
The commercial applications of this technology include the production of high-performance electronic components for various industries such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art in this field is the use of photolithography and etching techniques to create metal features in semiconductor devices. However, the specific method described in this patent application focuses on optimizing the shape of the metal features for enhanced performance.
Unanswered Questions
How does this method compare to existing techniques for forming metal features in semiconductor structures?
This method offers a unique approach to shaping metal features in semiconductor structures, potentially providing improved performance and reliability. However, a direct comparison with existing techniques is needed to evaluate its advantages.
What are the potential limitations or challenges in implementing this method on a large scale in semiconductor manufacturing facilities?
While the method described in the patent application shows promise for enhancing semiconductor device performance, there may be challenges in scaling up the process for mass production. Factors such as cost, efficiency, and compatibility with existing manufacturing equipment need to be considered.
Original Abstract Submitted
semiconductor structures and methods are provided. an exemplary method includes forming a first conductive feature in a dielectric layer, forming a metal-insulator-metal (mim) capacitor over the dielectric layer, forming a first passivation structure over the mim capacitor, forming a first contact via opening extending through the first passivation structure and the mim capacitor to expose the first conductive feature, depositing a conductive material to fill the first contact via opening, performing a first etching process to the conductive material to form a first metal feature, the first metal feature comprising a first portion filling the first contact via opening and a second portion over the first passivation structure, and performing a second etching process to trim the second portion of the first metal feature, after the second etching process, a shape of a cross-sectional view of the second portion of the first metal feature comprises a barrel shape.
