Taiwan semiconductor manufacturing company, ltd. (20240112957). BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT simplified abstract
Contents
- 1 BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yu-Xuan Wang of New Taipei (TW)
Cheng-Chun Tseng of Hsinchu (TW)
Yu-Hsien Lin of Kaohsiung (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112957 titled 'BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT
Simplified Explanation
The fabrication method described in the abstract involves forming metal layers over semiconductor structures, patterning photolithographic layers to expose portions of the metal layers, and generating a barrier structure between the semiconductor structures using the remaining metal layers.
- Forming metal layers over semiconductor structures
- Patterning photolithographic layers to expose portions of the metal layers
- Generating a barrier structure between semiconductor structures using remaining metal layers
Potential Applications
This technology could be applied in the manufacturing of semiconductor devices, integrated circuits, and other electronic components where precise patterning and barrier formation are required.
Problems Solved
This technology solves the problem of creating a barrier structure between semiconductor structures without exposing the boundary between them, which can improve the performance and reliability of electronic devices.
Benefits
The benefits of this technology include improved device performance, enhanced reliability, and increased manufacturing efficiency due to the precise control over the barrier formation process.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of advanced microprocessors, memory chips, and sensors where the precise patterning of metal layers and barrier formation are critical for device functionality.
Possible Prior Art
One possible prior art for this technology could be the use of sacrificial layers or etching techniques to create barrier structures in semiconductor devices. However, the specific method described in the patent application may offer advantages in terms of simplicity, efficiency, and control over the barrier formation process.
Unanswered Questions
How does this technology compare to existing methods for barrier formation in semiconductor devices?
This article does not provide a direct comparison to existing methods for barrier formation in semiconductor devices. It would be helpful to understand the specific advantages or limitations of this new method compared to traditional techniques.
What are the potential challenges or limitations of implementing this fabrication method in large-scale semiconductor manufacturing processes?
The article does not address the potential challenges or limitations of implementing this fabrication method in large-scale semiconductor manufacturing processes. It would be important to consider factors such as scalability, cost-effectiveness, and compatibility with existing manufacturing equipment.
Original Abstract Submitted
a fabrication method is disclosed that includes: forming a first metal layer over first and second semiconductor structures; forming a first patterned photolithographic layer with an opening that exposes a portion of the first metal layer over the first semiconductor structure but not to a boundary between semiconductor structures; removing the exposed portion of the first metal layer; forming a second metal layer over the first and second semiconductor structures; forming a second patterned photolithographic layer with an opening that exposes a portion of the second metal layer over the second semiconductor structure but not to the boundary; removing the exposed portion of the first and second metal layers; wherein a barrier structure is generated between the first and second semiconductor structures that includes remaining portions of the first metal layer and a portion of the second metal layer overlying the remaining portions of the first metal layer.
