Taiwan semiconductor manufacturing company, ltd. (20240112912). PHOTORESIST AND FORMATION METHOD THEREOF simplified abstract

PHOTORESIST AND FORMATION METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jui-Hsiung Liu of Taipei City (TW)

Yu-Fang Tseng of New Taipei City (TW)

Pin-Chia Liao of Taoyuan City (TW)

Burn Jeng Lin of Hsinchu City (TW)

Tsai-Sheng Gau of Hsinchu City (TW)

Po-Hsiung Chen of Taichung City (TW)

Po-Wen Chiu of Hsinchu City (TW)

PHOTORESIST AND FORMATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240112912 titled 'PHOTORESIST AND FORMATION METHOD THEREOF

Simplified Explanation

The abstract describes a method of manufacturing a semiconductor device involving the formation of a photoresist layer with a specific composition over a material layer on a substrate.

• The photoresist layer contains a solvent and a first photo-active compound dissolved in the solvent, represented by specific chemical formulas.
• The method involves precise steps to create the desired photoresist layer for semiconductor device fabrication.

Potential Applications

The technology described in this patent application could be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory chips.

Problems Solved

This technology addresses the need for a precise and reliable method of forming photoresist layers in semiconductor device fabrication processes.

Benefits

The method outlined in the patent application offers improved control and accuracy in the manufacturing of semiconductor devices, leading to enhanced performance and reliability.

Potential Commercial Applications

• "Advanced Semiconductor Device Manufacturing Process" - Optimizing semiconductor device production with innovative photoresist layer formation techniques.

Possible Prior Art

There may be existing methods for forming photoresist layers in semiconductor device manufacturing, but the specific composition and steps outlined in this patent application could represent a novel approach to the process.

What are the specific chemical formulas for the first photo-active compound mentioned in the abstract?

The specific chemical formulas for the first photo-active compound mentioned in the abstract are represented by formula (Al) or formula (A2).

How does the composition of the photoresist layer impact the overall performance of the semiconductor device?

The composition of the photoresist layer can affect the sensitivity, resolution, and adhesion properties of the semiconductor device, ultimately influencing its overall performance.

Original Abstract Submitted

a method of manufacturing a semiconductor device includes the following steps. a photoresist layer is formed over a material layer on a substrate. the photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. the first photo-active compound is represented by the following formula (al) or formula (a2):