Taiwan semiconductor manufacturing company, ltd. (20240111210). PHOTORESIST AND FORMATION METHOD THEREOF simplified abstract

PHOTORESIST AND FORMATION METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jui-Hsiung Liu of Taipei City (TW)

Pin-Chia Liao of Taoyuan City (TW)

Ting-An Lin of Taoyuan City (TW)

Ting-An Shih of Taichung City (TW)

Yu-Fang Tseng of New Taipei City (TW)

Burn Jeng Lin of Hsinchu City (TW)

Tsai-Sheng Gau of Hsinchu City (TW)

Po-Hsiung Chen of Taichung City (TW)

Po-Wen Chiu of Hsinchu City (TW)

PHOTORESIST AND FORMATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240111210 titled 'PHOTORESIST AND FORMATION METHOD THEREOF

Simplified Explanation

The abstract describes a method of manufacturing a semiconductor device involving the formation of a photoresist layer with specific compounds dissolved in a solvent.

• The method involves forming a photoresist layer over a material layer on a substrate.
• The photoresist layer contains a solvent and a first photo-active compound dissolved in the solvent, represented by specific chemical formulas.
• The first photo-active compound plays a crucial role in the manufacturing process of the semiconductor device.

Potential Applications

This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory chips.

Problems Solved

This technology helps in achieving precise patterning and etching processes in semiconductor manufacturing, leading to improved device performance and reliability.

Benefits

The use of specific photo-active compounds in the photoresist layer enhances the efficiency and accuracy of the manufacturing process, resulting in high-quality semiconductor devices.

Potential Commercial Applications

The technology can be utilized by semiconductor companies for the mass production of advanced electronic devices with enhanced performance characteristics.

Possible Prior Art

Prior art in semiconductor manufacturing processes involving photoresist layers and specific photo-active compounds may exist, but further research is needed to identify specific examples.

How does this method compare to existing semiconductor manufacturing techniques?

This article does not provide a direct comparison between this method and other existing techniques in the semiconductor industry. Further research and analysis are required to evaluate the advantages and limitations of this approach.

What are the long-term implications of using these specific photo-active compounds in semiconductor manufacturing?

The article does not delve into the long-term effects or potential challenges associated with the use of these specific compounds. Future studies and experiments may be necessary to assess the sustainability and scalability of this technology in the semiconductor industry.

Original Abstract Submitted

a method of manufacturing a semiconductor device includes the following steps. a photoresist layer is formed over a material layer on a substrate. the photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. the first photo-active compound is represented by the following formula (a1) or formula (a2):