Taiwan semiconductor manufacturing company, ltd. (20240107776). ANTIFERROELECTRIC NON-VOLATILE MEMORY simplified abstract
Contents
- 1 ANTIFERROELECTRIC NON-VOLATILE MEMORY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ANTIFERROELECTRIC NON-VOLATILE MEMORY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
ANTIFERROELECTRIC NON-VOLATILE MEMORY
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Chieh Lu of Taipei City (TW)
Chih-Yu Chang of New Taipei City (TW)
Yu-Chuan Shih of Hsinchu City (TW)
Huai-Ying Huang of Jhonghe City (TW)
Yu-Ming Lin of Hsinchu City (TW)
ANTIFERROELECTRIC NON-VOLATILE MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107776 titled 'ANTIFERROELECTRIC NON-VOLATILE MEMORY
Simplified Explanation
The abstract describes an antiferroelectric field-effect transistor (anti-FEFET) for a memory cell, utilizing an antiferroelectric layer instead of a ferroelectric layer to provide sharper voltage drops for erase operations.
- Antiferroelectric layer in the anti-FEFET operates in programmed and erased states, providing fully polarized and non-polarized alignments respectively.
- This allows for a sharper/larger voltage drop during erase operations compared to traditional ferroelectric materials that switch between fully polarized states.
Potential Applications
The technology can be applied in memory devices, non-volatile memory storage, and other electronic devices requiring efficient erase operations.
Problems Solved
1. Improved efficiency in erase operations in memory cells. 2. Enhanced performance and reliability in electronic devices utilizing antiferroelectric materials.
Benefits
1. Sharper voltage drops for erase operations. 2. Increased stability and durability of memory cells. 3. Enhanced overall performance of electronic devices.
Potential Commercial Applications
"Antiferroelectric Field-Effect Transistor (Anti-FEFET) for Memory Cells: Commercial Applications"
Possible Prior Art
There may be prior art related to the use of antiferroelectric materials in memory devices or field-effect transistors, but specific examples are not provided in this abstract.
Unanswered Questions
How does the use of antiferroelectric materials impact the overall power consumption of electronic devices?
The abstract does not mention the potential effects of using antiferroelectric materials on power consumption in electronic devices.
Are there any limitations or drawbacks to using antiferroelectric materials in memory cells compared to traditional ferroelectric materials?
The abstract does not address any potential limitations or drawbacks of utilizing antiferroelectric materials in memory cells.
Original Abstract Submitted
an antiferroelectric field effect transistor (anti-fefet) of a memory cell includes an antiferroelectric layer instead of a ferroelectric layer. the antiferroelectric layer may operate based on a programmed state and an erased state in which the antiferroelectric layer is in a fully polarized alignment and a non-polarized alignment (or a random state of polarization), respectively. this enables the antiferroelectric layer in the fefet to provide a sharper/larger voltage drop for an erase operation of the fefet (e.g., in which the fefet switches or transitions from the programmed state to the erased state) relative to a ferroelectric material layer that operates based on switching between two opposing fully polarized states.
