Taiwan semiconductor manufacturing company, ltd. (20240105848). SEMICONDUCTOR DEVICE STRUCTURE WITH HIGH CONTACT AREA simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE WITH HIGH CONTACT AREA

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shuen-Shin Liang of Hsinchu County (TW)

Pang-Yen Tsai of Jhu-bei City (TW)

Keng-Chu Lin of Ping-Tung (TW)

Sung-Li Wang of Zhubei City (TW)

Pinyen Lin of Rochester NY (US)

SEMICONDUCTOR DEVICE STRUCTURE WITH HIGH CONTACT AREA - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105848 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH HIGH CONTACT AREA

Simplified Explanation

The semiconductor device structure described in the abstract includes multiple semiconductor nanostructures with epitaxial structures extending from their edges, as well as a gate stack wrapped around the nanostructures. The epitaxial structures are made of a second semiconductor material different from the first semiconductor material in the nanostructures.

• The semiconductor device structure includes multiple semiconductor nanostructures.
• The semiconductor nanostructures are made of a first semiconductor material.
• Epitaxial structures extend from the edges of the semiconductor nanostructures.
• The epitaxial structures are made of a second semiconductor material different from the first semiconductor material.
• A gate stack is wrapped around the semiconductor nanostructures.

Potential Applications

The technology described in this patent application could be applied in:

• Advanced semiconductor devices
• Nanoelectronics
• Quantum computing

Problems Solved

This technology helps address the following issues:

• Enhancing the performance of semiconductor devices
• Improving the efficiency of nanoelectronic components
• Enabling the development of novel quantum computing systems

Benefits

The benefits of this technology include:

• Increased functionality of semiconductor devices
• Enhanced integration of nanostructures in electronic components
• Potential for higher processing speeds in quantum computing

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

• Semiconductor manufacturing companies
• Electronics industry
• Research institutions focusing on nanotechnology

Possible Prior Art

One possible prior art related to this technology could be:

• Previous patents on semiconductor nanostructures with epitaxial structures

What are the specific semiconductor materials used in the nanostructures and epitaxial structures?

The abstract mentions that the nanostructures are made of a first semiconductor material, while the epitaxial structures are made of a second semiconductor material. However, it does not specify the exact semiconductor materials used in this context.

How does the gate stack wrapped around the semiconductor nanostructures contribute to the overall functionality of the device?

While the abstract mentions the presence of a gate stack wrapped around the semiconductor nanostructures, it does not elaborate on how this feature enhances the performance or functionality of the semiconductor device structure.

Original Abstract Submitted

a semiconductor device structure is provided. the semiconductor device structure includes multiple semiconductor nanostructures, and the semiconductor nanostructures include a first semiconductor material. the semiconductor device structure also includes multiple epitaxial structures extending from edges of the semiconductor nanostructures. the epitaxial structures include a second semiconductor material that is different than the first semiconductor material. the semiconductor device structure further includes a gate stack wrapped around the semiconductor nanostructures.