Taiwan semiconductor manufacturing company, ltd. (20240105817). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105817 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The semiconductor device described in the abstract includes a metal gate structure over a semiconductor channel, with a gate electrode having side portions extending towards the semiconductor fin with different depths.
- Metal gate structure over semiconductor channel
- Gate electrode with side portions of different depths
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuits
- Electronic devices
Problems Solved
This technology helps address the following issues:
- Improving performance of semiconductor devices
- Enhancing efficiency of electronic components
Benefits
The benefits of this technology include:
- Increased functionality of semiconductor devices
- Enhanced reliability of electronic systems
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Telecommunications industry
- Automotive sector
Possible Prior Art
One possible prior art related to this technology could be the development of metal gate structures in semiconductor devices to improve performance and efficiency.
Unanswered Questions
How does this technology compare to existing metal gate structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing metal gate structures in semiconductor devices.
What specific electronic devices could benefit the most from this technology?
The article does not specify which electronic devices could see the most significant improvements from implementing this technology.
Original Abstract Submitted
a semiconductor device includes a semiconductor channel. the semiconductor device includes a metal gate structure disposed over the semiconductor channel. the semiconductor device includes a gate electrode having a bottom surface contacting an upper surface of the metal gate structure. the gate electrode has its side portions extending from its top surface toward the semiconductor fin with a first depth and a central portion extending from its top surface toward the semiconductor fin with a second depth, the first depth being substantially greater than the second depth.
