Taiwan semiconductor manufacturing company, ltd. (20240105806). Multi-Gate Devices And Method Of Forming The Same simplified abstract
Contents
- 1 Multi-Gate Devices And Method Of Forming The Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Multi-Gate Devices And Method Of Forming The Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Multi-Gate Devices And Method Of Forming The Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuan-Ting Pan of Taipei City (TW)
Wei-Yang Lee of Taipei City (TW)
Multi-Gate Devices And Method Of Forming The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105806 titled 'Multi-Gate Devices And Method Of Forming The Same
Simplified Explanation
The patent application describes a semiconductor structure with a vertical stack of channel members, gate structures wrapping around each channel member, source/drain features, and a dielectric feature with a v-shape sidewall surface.
- Vertical stack of channel members
- Gate structures wrapping around each channel member
- Source/drain features adjacent to the gate structure
- Dielectric feature with a v-shape sidewall surface
Potential Applications
This technology could be applied in the development of advanced semiconductor devices, such as high-performance transistors for use in integrated circuits.
Problems Solved
This innovation addresses the need for improved performance and efficiency in semiconductor devices by optimizing the structure and materials used in their fabrication.
Benefits
The benefits of this technology include enhanced device performance, increased energy efficiency, and potentially reduced manufacturing costs.
Potential Commercial Applications
Potential commercial applications of this technology could include the production of faster and more energy-efficient electronic devices for various industries, such as consumer electronics, telecommunications, and computing.
Possible Prior Art
One possible prior art for this technology could be the use of similar dielectric features in semiconductor structures to improve device performance and reliability.
Unanswered Questions
How does this semiconductor structure compare to existing technologies in terms of performance and efficiency?
The article does not provide a direct comparison with existing technologies to evaluate the performance and efficiency improvements offered by this innovation.
What specific manufacturing processes are required to fabricate this semiconductor structure?
The article does not detail the specific manufacturing processes involved in fabricating this semiconductor structure, which could be crucial for understanding its practical implementation.
Original Abstract Submitted
semiconductor structures and methods of forming the same are provided. in an embodiment, an exemplary semiconductor structure includes a vertical stack of channel members disposed over a substrate, a gate structure wrapping around each channel member of the vertical stack of channel members, a source/drain feature coupled to the vertical stack of channel members and adjacent the gate structure; and a dielectric feature disposed between the source/drain feature and the substrate, in a cross-sectional view, the dielectric feature includes a v-shape sidewall surface.
