Taiwan semiconductor manufacturing company, ltd. (20240105795). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jih-Sheng Yang of Hsinchu (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105795 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The method disclosed in the patent application involves fabricating semiconductor devices by forming a gate trench over a semiconductor channel, depositing various metals in the gate trench, and etching to form a gate electrode above a metal gate structure.
- Forming a gate trench over a semiconductor channel
- Depositing a work function metal, a glue metal, and an electrode metal in the gate trench
- Etching portions of the metals to form a gate electrode above a metal gate structure
- Gate electrode has an upper surface extending away from the metal gate structure
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for use in electronic devices.
Problems Solved
This technology solves the problem of efficiently fabricating semiconductor devices with precise gate structures, which is essential for achieving optimal device performance.
Benefits
The benefits of this technology include improved device performance, increased efficiency in semiconductor manufacturing processes, and potentially lower production costs.
Potential Commercial Applications
The technology could have commercial applications in the semiconductor industry for producing high-performance electronic devices, as well as in research and development for advancing semiconductor technology.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods for fabricating semiconductor devices with metal gate structures, although the specific sequence of depositing and etching different metals may be unique to this patent application.
Unanswered Questions
How does this technology compare to existing methods for fabricating semiconductor devices with metal gate structures?
This article does not provide a direct comparison to existing methods, so it is unclear how this technology differs or improves upon current practices in the semiconductor industry.
What are the potential challenges or limitations of implementing this technology on a large scale in semiconductor manufacturing facilities?
The article does not address the scalability or practicality of implementing this technology in mass production settings, leaving room for further exploration into the challenges and limitations that may arise.
Original Abstract Submitted
a method for fabricating semiconductor devices is disclosed. the method includes forming a gate trench over a semiconductor channel, the gate trench being surrounded by gate spacers. the method includes sequentially depositing a work function metal, a glue metal, and an electrode metal in the gate trench. the method includes etching respective portions of the electrode metal and the glue metal to form a gate electrode above a metal gate structure. the metal gate structure includes a remaining portion of the work function metal and the gate electrode includes a remaining portion of the electrode metal. the gate electrode has an upper surface extending away from a top surface of the metal gate structure.
