Taiwan semiconductor manufacturing company, ltd. (20240105725). CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES simplified abstract
Contents
- 1 CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Gerben Doornbos of Hsinchu (TW)
Marcus Johannes Henricus Van Dal of Hsinchu (TW)
CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105725 titled 'CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES
Simplified Explanation
The abstract describes an integrated circuit with a complimentary field effect transistor (CFET) that includes a first transistor and a second transistor stacked vertically, with a conductive via extending vertically from a first source/drain region of the first transistor past the second transistor. The second transistor has an asymmetric second source/drain region to prevent contact with the conductive via.
- Integrated circuit with CFET
- CFET includes first and second transistors stacked vertically
- Conductive via extends vertically from first source/drain region of first transistor
- Second transistor has asymmetric second source/drain region
- Asymmetry prevents contact with conductive via
Potential Applications
The technology could be applied in:
- High-performance computing
- Power management systems
- Communication devices
Problems Solved
The innovation addresses issues such as:
- Potential short circuits in CFETs
- Improved reliability of integrated circuits
- Enhanced performance of electronic devices
Benefits
The benefits of this technology include:
- Increased efficiency in circuit design
- Enhanced reliability of CFETs
- Improved overall performance of electronic systems
Potential Commercial Applications
This technology could be utilized in:
- Semiconductor manufacturing companies
- Electronics industry for consumer devices
- Telecommunications sector for network infrastructure
Possible Prior Art
One possible prior art could be the use of asymmetric source/drain regions in transistors to prevent contact with conductive vias.
Unanswered Questions
How does the asymmetry of the second source/drain region impact the overall performance of the CFET?
The asymmetry of the second source/drain region helps prevent contact with the conductive via, ensuring the reliability and functionality of the integrated circuit.
What are the specific dimensions and materials used in the conductive via and source/drain regions of the transistors?
The abstract does not provide specific details on the dimensions and materials used in the conductive via and source/drain regions of the transistors. Additional information would be needed to fully understand the implementation of this technology.
Original Abstract Submitted
an integrated circuit includes a complimentary field effect transistor (cfet). the cfet includes a first transistor and a second transistor stacked vertically. a conductive via extends vertically from a first source/drain region of the first transistor past the second transistor. the second transistor includes an asymmetric second source/drain region. the asymmetry of the second source/drain region helps ensure that the second source/drain region does not contact the conductive via.
