Taiwan semiconductor manufacturing company, ltd. (20240105707). Semiconductor Structures And Methods Of Forming The Same simplified abstract
Contents
- 1 Semiconductor Structures And Methods Of Forming The Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Structures And Methods Of Forming The Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Semiconductor Structures And Methods Of Forming The Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Fu-Chiang Kuo of Hsinchu City (TW)
Meei-Shiou Chern of Hsinchu County (TW)
Jyun-Ting Hou of Taipei City (TW)
Semiconductor Structures And Methods Of Forming The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105707 titled 'Semiconductor Structures And Methods Of Forming The Same
Simplified Explanation
The abstract of the patent application describes a method for forming semiconductor structures involving trenches, material layers, and capacitors.
- The method involves forming a trench in a substrate, with the trench extending lengthwise along a first direction in a top view.
- A material layer is then formed over the substrate, intersecting a first portion of the trench.
- After the material layer is formed, a first capacitor is created, intersecting a second portion of the trench, consisting of a first plurality of conductor plates.
- A second capacitor is also formed, intersecting a third portion of the trench, consisting of a second plurality of conductor plates that are in direct contact with the material layer.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as memory chips and processors.
Problems Solved
This technology helps in increasing the capacitance and efficiency of semiconductor devices by optimizing the layout of capacitors within the structure.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, as well as potentially reducing the overall size of the devices.
Potential Commercial Applications
Potential commercial applications of this technology include the production of high-performance electronic devices for various industries, such as telecommunications, computing, and automotive.
Possible Prior Art
One possible prior art for this technology could be the use of similar trench structures and capacitor layouts in previous semiconductor manufacturing processes.
Unanswered Questions
How does this technology compare to existing methods for forming semiconductor structures?
This article does not provide a direct comparison to existing methods for forming semiconductor structures, leaving the reader to wonder about the specific advantages and disadvantages of this new approach.
What are the specific materials and processes used in forming the conductor plates and material layers in this method?
The article does not delve into the specific materials and processes used in forming the conductor plates and material layers, leaving a gap in understanding the technical details of the innovation.
Original Abstract Submitted
semiconductor structures and methods are provided. an exemplary method according to the present disclosure includes forming a trench extending into a substrate, in a top view, the trench extends lengthwise along a first direction, forming a material layer over the substrate and intersecting a first portion of the trench, after the forming of material layer, forming a first capacitor intersecting a second portion of the trench, the first capacitor comprising a first plurality of conductor plates, and forming a second capacitor intersecting a third portion of the trench, the second capacitor comprising a second plurality of conductor plates, where the first plurality of conductor plates and the second plurality of conductor plates are in direct contact with the material layer.
