Taiwan semiconductor manufacturing company, ltd. (20240105619). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Fong-Yuan Chang of Hsinchu (TW)

Noor Mohamed Ettuveettil of Hsinchu (TW)

Po-Hsiang Huang of Tainan City (TW)

Sen-Bor Jan of Tainan City (TW)

Ming-Fa Chen of Taichung City (TW)

Chin-Chou Liu of Xinfeng Township (TW)

Yi-Kan Cheng of Taipei (TW)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105619 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Simplified Explanation

The abstract describes a patent application for semiconductor devices and methods of manufacture involving a metallization layer over a substrate, with a power grid line and a signal pad located within the metallization layer. The signal pad is surrounded by the power grid line, and a signal external connection is electrically connected to the signal pad.

• Power grid line and signal pad located within metallization layer
• Signal pad surrounded by power grid line
• Signal external connection electrically connected to signal pad

Potential Applications

This technology could be applied in the manufacturing of various semiconductor devices such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This innovation helps in improving the efficiency and performance of semiconductor devices by providing a more organized and compact layout for power grid lines and signal pads.

Benefits

The benefits of this technology include enhanced signal transmission, reduced signal interference, and overall improved functionality of semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the electronics industry for the production of advanced and high-performance semiconductor devices.

Possible Prior Art

One possible prior art could be the use of similar layouts for power grid lines and signal pads in semiconductor devices, but this specific configuration with the signal pad surrounded by the power grid line may be a novel aspect of this innovation.

How does this technology compare to existing methods of layout design in semiconductor devices?

This article does not provide a direct comparison to existing methods of layout design in semiconductor devices. It would be interesting to know if this new configuration offers any significant advantages over traditional layouts.

What impact could this innovation have on the overall cost of manufacturing semiconductor devices?

The article does not address the potential cost implications of implementing this technology in semiconductor device manufacturing. It would be valuable to understand if this innovation could lead to cost savings or increased production efficiency.

Original Abstract Submitted

semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. a signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. a signal external connection is electrically connected to the signal pad.