Taiwan semiconductor manufacturing company, ltd. (20240105515). TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME simplified abstract

TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chao-Ching Cheng of Hsinchu (TW)

Tzu-Ang Chao of Hsinchu (TW)

Chun-Chieh Lu of Taipei City (TW)

Hung-Li Chiang of Taipei City (TW)

Tzu-Chiang Chen of Hsinchu (TW)

Lain-Jong Li of Hsinchu (TW)

TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105515 titled 'TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME

Simplified Explanation

The method described in the abstract involves forming a protruding fin by patterning low-dimensional layers and insulators, and then forming a transistor based on this fin.

• Formation of a first low-dimensional layer over an isolation layer
• Formation of a first insulator over the first low-dimensional layer
• Formation of a second low-dimensional layer over the first insulator
• Formation of a second insulator over the second low-dimensional layer
• Patterning of the layers and insulators into a protruding fin
• Remaining portions form low-dimensional and insulator strips
• Formation of a transistor based on the protruding fin

Potential Applications

This technology could be applied in the manufacturing of advanced transistors for electronic devices, such as smartphones, computers, and other semiconductor devices.

Problems Solved

This method solves the problem of creating high-performance transistors with improved efficiency and reduced power consumption by utilizing protruding fins for better control of electrical properties.

Benefits

The benefits of this technology include enhanced transistor performance, increased device speed, reduced power consumption, and improved overall functionality of electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions working on developing cutting-edge electronic devices.

Possible Prior Art

One possible prior art could be the use of finFET technology in semiconductor manufacturing, which also involves forming fins for improved transistor performance.

How does this method compare to traditional transistor manufacturing processes?

This article does not provide a direct comparison between this method and traditional transistor manufacturing processes in terms of efficiency, cost, or performance.

What are the specific dimensions and materials used in the formation of the low-dimensional layers and insulators?

The article does not specify the exact dimensions or materials used in the formation of the low-dimensional layers and insulators, which could impact the performance and characteristics of the resulting transistor.

Original Abstract Submitted

a method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. a transistor is then formed based on the protruding fin.