Taiwan semiconductor manufacturing company, ltd. (20240102162). MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Yi Chou of Hsinchu City (TW)
Chih-Piao Chuu of Hsinchu City (TW)
Miin-Jang Chen of Hsinchu City (TW)
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240102162 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the abstract involves pulsing precursors over a substrate, adsorbing them on different regions, removing certain precursors using plasma, and forming a film on the substrate.
- First precursor is pulsed over the substrate, adsorbing on two different regions.
- A first plurality of the first precursor adsorbing on one region is removed using plasma.
- A second plurality of the first precursor adsorbing on the second region is left.
- A second precursor is pulsed to form a monolayer of a film on the second region and a material on the first region.
- The material on the first region is removed using plasma.
- The substrate is biased during the material removal process.
Potential Applications
This technology could be applied in thin film deposition processes, surface modification, and semiconductor manufacturing.
Problems Solved
This method solves the problem of precise control over film deposition on different regions of a substrate, allowing for tailored material properties.
Benefits
The benefits of this technology include improved film quality, enhanced surface functionalities, and increased efficiency in material deposition processes.
Potential Commercial Applications
Potential commercial applications of this technology include advanced coatings for electronics, sensors, and biomedical devices.
Possible Prior Art
One possible prior art could be the use of plasma in thin film deposition processes, but the specific method described in the abstract may be novel.
Unanswered Questions
How does this method compare to traditional thin film deposition techniques?
This article does not provide a direct comparison to traditional methods, leaving the reader to wonder about the advantages and limitations of this new approach.
What are the specific parameters for plasma treatment in this method?
The article does not detail the specific parameters for plasma treatment, leaving room for further exploration into the optimization of this step in the process.
Original Abstract Submitted
a method includes following steps. a first precursor is pulsed over a substrate such that first precursor adsorbs on a first region and a second region of the substrate. a first plurality of the first precursor adsorbing on the first region is then removed using a plasma, while leaving a second plurality of the first precursor adsorbing on the second region. a second precursor is then pulsed to the substrate to form a monolayer of a film on the second region and a material on the first region. the material is then removed using a plasma. the substrate is biased during removing the material.
