Taiwan semiconductor manufacturing co., ltd. (20240130099). STATIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF simplified abstract

STATIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Gerben Doornbos of Hsinchu (TW)

STATIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130099 titled 'STATIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a static random access memory (SRAM) and its manufacturing method, which includes specific components such as complementary field effect transistors (CFETs) and pass gate transistors.

• The SRAM includes a first tier with a first CFET and a second CFET, as well as a second tier with first and second pass gate transistors.
• The first pass gate transistor is connected to the first CFET through a first path, while the second pass gate transistor is connected to the second CFET through a second path.

Potential Applications

The technology described in the patent application could be applied in:

• Electronic devices requiring fast and reliable memory storage.
• Computing systems where high-speed data access is crucial.

Problems Solved

This technology addresses issues such as:

• Providing a stable and efficient memory storage solution.
• Enhancing the performance of electronic devices by improving data access speeds.

Benefits

The benefits of this technology include:

• Faster data access and retrieval.
• Improved overall performance of electronic devices.
• Enhanced reliability and stability of memory storage.

Potential Commercial Applications

The technology could be commercially applied in:

• Consumer electronics such as smartphones and tablets.
• Computer systems and servers requiring high-speed memory solutions.

Possible Prior Art

One example of prior art in this field is the traditional SRAM design with different transistor configurations for memory storage.

How does this technology compare to other types of memory storage solutions on the market?

This article does not provide a direct comparison with other memory storage technologies, such as dynamic random access memory (DRAM) or flash memory.

What are the specific manufacturing processes involved in creating this SRAM design?

The article does not delve into the detailed manufacturing steps required to produce the SRAM described in the patent application.

Original Abstract Submitted

a static random access memory and a manufacturing method thereof are provided. the static random access memory includes a first complementary field effect transistor (cfet), a second cfet, a first pass fate transistor and a second pass gate transistor. the first cfet and the second cfet are disposed in a first tier. the first pass gate transistor is connected to the first cfet through a first path. the second pass gate transistor is connected to the second cfet through a second path. the first pass gate transistor and the second pass gate transistor are disposed in a second tier.