Taiwan semiconductor manufacturing co., ltd. (20240128378). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Yi-Cheng Chu of Chiayi City (TW)
Chien-Hua Huang of Miaoli County (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chung-Te Lin of Tainan City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128378 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a first transistor with a protection structure. The protection structure surrounds the gate electrode, gate dielectric, and channel layer of the first transistor, providing additional security and stability to the device.
- The first transistor consists of a gate electrode, gate dielectric, and channel layer.
- The protection structure includes a first capping layer and a dielectric portion.
- The first capping layer surrounds and contacts the gate electrode, gate dielectric, and channel layer.
- The dielectric portion is placed on the first capping layer, surrounding the first transistor laterally.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
This innovation addresses:
- Protection of sensitive components in semiconductor devices
- Enhancing the reliability and durability of transistors
- Preventing damage from external factors
Benefits
The benefits of this technology include:
- Improved performance of semiconductor devices
- Increased lifespan of transistors
- Enhanced security and stability of electronic components
Potential Commercial Applications
Optimizing semiconductor devices for:
- Consumer electronics
- Telecommunications equipment
- Automotive electronics
Possible Prior Art
One possible prior art could be the use of additional protective layers in semiconductor devices to enhance their durability and reliability.
Unanswered Questions
How does this technology compare to existing protection structures in semiconductor devices?
This article does not provide a direct comparison to other protection structures currently used in semiconductor devices.
What are the specific materials used in the first capping layer and dielectric portion of the protection structure?
The abstract does not mention the exact materials utilized in the first capping layer and dielectric portion of the protection structure.
Original Abstract Submitted
a semiconductor device includes a first transistor and a protection structure. the first transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, and a channel layer disposed on the gate dielectric. the protection structure is laterally surrounding the gate electrode, the gate dielectric and the channel layer of the first transistor. the protection structure includes a first capping layer and a dielectric portion. the first capping layer is laterally surrounding and contacting the gate electrode, the gate dielectric and the channel layer of the first transistor. the dielectric portion is disposed on the first capping layer and laterally surrounding the first transistor.
