Taiwan semiconductor manufacturing co., ltd. (20240128375). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chun-Yi Chang of Taoyuan City (TW)

Yu Ying Chen of Taoyuan City (TW)

Zhen-Cheng Wu of Hsinchu City (TW)

Chi On Chui of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128375 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The method described in the patent application involves a process for depositing a dielectric layer in a trench with modified surfaces to improve the deposition rate on specific portions of the trench.

• Formation of semiconductor fins and gate structure over a substrate
• Formation of source/drain epitaxy structures over the semiconductor fins
• Formation of an interlayer dielectric (ILD) layer over the source/drain epitaxy structures
• Etching of the gate structure and ILD layer to form a trench
• First surface treatment to modify surfaces of the trench to NH-terminated
• Second surface treatment to modify surfaces of the trench to N-terminated on the top portion while leaving the bottom portion NH-terminated
• Deposition of a dielectric layer in the trench, with a higher deposition rate on the surfaces of the bottom portion

---

1. 1. 1. Potential Applications

This technology could be applied in the semiconductor industry for the fabrication of advanced integrated circuits and electronic devices.

1. 1. 1. Problems Solved

This technology solves the problem of uneven dielectric deposition rates in trenches, which can affect the performance and reliability of semiconductor devices.

1. 1. 1. Benefits

- Improved uniformity and quality of dielectric layers in trenches - Enhanced performance and reliability of semiconductor devices - Increased efficiency in the fabrication process

1. 1. 1. Potential Commercial Applications
         1. Improving Dielectric Deposition in Trenches for Advanced Semiconductor Devices

1. 1. 1. Possible Prior Art

There may be prior art related to surface treatments for modifying trench surfaces in semiconductor device fabrication processes, as well as techniques for enhancing dielectric deposition rates in specific areas of trenches.

---

1. 1. 1. 1. Unanswered Questions

1. 1. 1. How does this technology compare to existing methods for dielectric deposition in trenches?

This article does not provide a direct comparison with existing methods for dielectric deposition in trenches. Further research or testing may be needed to evaluate the effectiveness and efficiency of this technology compared to current practices.

1. 1. 1. What are the specific semiconductor applications that could benefit most from this technology?

The article does not specify the particular semiconductor applications that could benefit most from this technology. Understanding the targeted industries or devices where this innovation can have the most significant impact would be valuable for potential users or investors.

Original Abstract Submitted

a method includes forming first and second semiconductor fins and a gate structure over a substrate; forming a first and second source/drain epitaxy structures over the first and second semiconductor fins; forming an interlayer dielectric (ild) layer over the first and second source/drain epitaxy structures; etching the gate structure and the ild layer to form a trench; performing a first surface treatment to modify surfaces of a top portion and a bottom portion of the trench to nh-terminated; performing a second surface treatment to modify the surfaces of the top portion of the trench to n-terminated, while leaving the surfaces of the bottom portion of the trench being nh-terminated; and depositing a first dielectric layer in the trench, wherein the first dielectric layer has a higher deposition rate on the surfaces of the bottom portion of the trench than on the surfaces of the bottom portion of the trench.