Taiwan semiconductor manufacturing co., ltd. (20240128312). MULTILAYER CAPACITOR ELECTRODE simplified abstract
Contents
- 1 MULTILAYER CAPACITOR ELECTRODE
MULTILAYER CAPACITOR ELECTRODE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hsiang-Ku Shen of Hsinchu City (TW)
MULTILAYER CAPACITOR ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128312 titled 'MULTILAYER CAPACITOR ELECTRODE
Simplified Explanation
The abstract describes a semiconductor device with multiple layers including dielectric layers, conductor plate layers, and passivation layers.
- The semiconductor device includes a contact feature in a first dielectric layer.
- A bottom conductor plate layer is disposed over a first passivation layer and includes a first plurality of sublayers.
- A middle conductor plate layer is disposed over a second dielectric layer and includes a second plurality of sublayers.
- A top conductor plate layer is disposed over a third dielectric layer and includes a third plurality of sublayers.
- The device also includes a second passivation layer over the top conductor plate layer.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as integrated circuits, sensors, and memory devices.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing a structured and efficient layering system that enhances the functionality of the device.
Benefits
The structured layering system in this semiconductor device helps in reducing signal interference, increasing signal transmission efficiency, and overall improving the performance of the device.
Potential Commercial Applications
- Advanced electronic devices
- Semiconductor manufacturing industry
Possible Prior Art
Prior art in semiconductor device manufacturing includes various methods and structures for improving device performance and reliability, such as different layering techniques and passivation methods.
Unanswered Questions
How does this technology compare to existing semiconductor layering techniques?
This article does not provide a direct comparison to existing semiconductor layering techniques, leaving the reader to wonder about the specific advantages and disadvantages of this new approach.
What specific electronic applications could benefit the most from this technology?
While the article mentions potential applications in integrated circuits and memory devices, it does not delve into the specific industries or products that could see the most significant improvements from implementing this technology.
Original Abstract Submitted
semiconductor devices and methods of forming the same are provided. in one embodiment, a semiconductor device includes a contact feature in a first dielectric layer, a first passivation layer over the contact feature, a bottom conductor plate layer disposed over the first passivation layer and including a first plurality of sublayers, a second dielectric layer over the bottom conductor plate layer, a middle conductor plate layer disposed over the second dielectric layer and including a second plurality of sublayers, a third dielectric layer over the middle conductor plate layer, a top conductor plate layer disposed over the third dielectric layer and including a third plurality of sublayers, and a second passivation layer over the top conductor plate layer.
