Taiwan semiconductor manufacturing co., ltd. (20240128261). Passive Device Dies With Measurement Structures simplified abstract

Passive Device Dies With Measurement Structures

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Fu-Chiang Kuo of Hsinchu City (TW)

Yu-Hsin Fang of Kaohsiung City (TW)

Min-Hsiung Chen of Hsinchu City (TW)

Passive Device Dies With Measurement Structures - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128261 titled 'Passive Device Dies With Measurement Structures

Simplified Explanation

The patent application describes a structure and method for improving manufacturing yield of passive device dies. The structure includes capacitors, interconnect structures, bonding structures, and measurement structures to measure electrical properties of the capacitors.

• The structure includes first and second groups of capacitors on a substrate.
• An interconnect structure connects the first and second groups of capacitors.
• First and second bonding structures are connected to the first and second conductive lines.
• First and second measurement structures are connected to the first and second conductive lines to measure electrical properties of the capacitors.
• The first bonding structure is connected to the first group of capacitors, while the second bonding structure is isolated from the capacitors.
• The first and second measurement structures are electrically isolated from each other.

1. 1. 1. Potential Applications

This technology can be applied in the manufacturing of passive device dies to improve yield and quality control.

1. 1. 1. Problems Solved

This technology helps in improving manufacturing yield of passive device dies by measuring electrical properties of capacitors.

1. 1. 1. Benefits

The benefits of this technology include increased manufacturing yield, improved quality control, and enhanced reliability of passive device dies.

1. 1. 1. Potential Commercial Applications

This technology can be utilized in the semiconductor industry for manufacturing passive device dies with higher yield and improved quality.

1. 1. 1. Possible Prior Art

Prior art related to improving manufacturing yield of passive device dies may include methods for measuring electrical properties of capacitors in semiconductor manufacturing processes.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing methods for improving manufacturing yield of passive device dies?

This article does not provide a direct comparison to existing methods for improving manufacturing yield of passive device dies. Further research and analysis would be needed to determine the specific advantages and disadvantages of this technology compared to existing methods.

1. 1. 1. 1. What are the specific electrical properties measured by the first and second measurement structures in this technology?

The article mentions that the first and second measurement structures are configured to measure electrical properties of the first and second groups of capacitors, but it does not specify the exact properties being measured. Further details on the specific electrical properties measured would be necessary for a complete understanding of the technology.

Original Abstract Submitted

a structure and method for improving manufacturing yield of passive device dies are disclosed. the structure includes first and second groups of capacitors disposed on a substrate, an interconnect structure disposed on the first and second groups of capacitors, first and second bonding structures disposed on the first and second conductive lines, respectively, and first and second measurement structures connected to the first and second conductive lines, respectively, and configured to measure electrical properties of the first and second groups of capacitors, respectively. the interconnect structure includes first and second conductive line connected to the first and second groups of trench capacitors, respectively. the first bonding structure is electrically connected to the first group of capacitors and the second bonding structure is electrically isolated from the first and second groups of capacitors. the first and second measurement structures are electrically isolated from each other.