Taiwan semiconductor manufacturing co., ltd. (20240128125). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Winnie Victoria Wei-Ning Chen of Hsinchu County (TW)

Chia-Ling Pai of Taichung City (TW)

Pang-Yen Tsai of Hsin-Chu (TW)

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128125 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The method described in the abstract involves growing an epitaxial feature in a recess on a substrate by alternately growing a sub-layer of the epitaxial feature and selectively etching it while providing UV radiation.

• Explanation of the patent/innovation:

   * Provides a method for forming semiconductor devices with epitaxial features in recesses on substrates.
   * Utilizes alternating growth and etching steps with UV radiation to control the epitaxial feature's formation.
   * Offers a precise and controlled way to create epitaxial features in semiconductor devices.

Potential Applications

The technology could be applied in:

• Semiconductor manufacturing
• Optoelectronics
• Photovoltaics

Problems Solved

The method addresses issues such as:

• Controlling the growth of epitaxial features
• Improving the quality and uniformity of semiconductor devices
• Enhancing the performance of optoelectronic components

Benefits

The innovation provides benefits such as:

• Increased efficiency in semiconductor device production
• Enhanced functionality of optoelectronic devices
• Improved performance and reliability of photovoltaic systems

Potential Commercial Applications

A section on potential commercial applications of this technology could be titled: Enhancing Semiconductor Device Manufacturing with Epitaxial Feature Growth

Possible Prior Art

There may be prior art related to:

• Methods for growing epitaxial features in semiconductor devices
• Techniques for controlling epitaxial feature formation
• Approaches to improving the performance of optoelectronic components

Unanswered Questions

How does this method compare to existing techniques for growing epitaxial features in semiconductor devices?

The article does not provide a direct comparison with other methods in the field.

What specific semiconductor devices could benefit the most from this technology?

The potential applications section mentions broad categories, but specific examples are not provided.

Original Abstract Submitted

a method of forming a semiconductor device includes providing a substrate having a recess, and growing an epitaxial feature in the recess. the method of growing the epitaxial feature includes: (a) growing a sub-layer of the epitaxial feature; (b) selectively etching the sub-layer of the epitaxial feature while providing a first uv radiation; and (c) repeating step (a) and step (b) alternately multiple times.