Taiwan semiconductor manufacturing co., ltd. (20240125713). Defect Inspection System and Method simplified abstract

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Defect Inspection System and Method

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Hao Chun Yang of New Taipei City (TW)

Ming-Da Cheng of Taoyuan (TW)

Pei-Wei Lee of Kaohsiung City (TW)

Mirng-Ji Lii of Sinpu Township (TW)

Defect Inspection System and Method - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240125713 titled 'Defect Inspection System and Method

Simplified Explanation

The method described in the abstract involves directing light at one side of a semiconductor structure, detecting the intensity of light that passes through the structure, and comparing it to an expected intensity.

  • Directing light at one side of a semiconductor structure
  • Detecting the intensity of light that passes through the structure
  • Comparing the detected light intensity to an expected intensity

Potential Applications

This technology could be used in:

  • Semiconductor manufacturing
  • Quality control in semiconductor production

Problems Solved

This technology helps in:

  • Monitoring light penetration through semiconductor structures
  • Ensuring consistency in semiconductor production

Benefits

The benefits of this technology include:

  • Improved quality control
  • Enhanced efficiency in semiconductor manufacturing processes

Potential Commercial Applications

The potential commercial applications of this technology include:

  • Semiconductor industry quality control systems
  • Research and development in semiconductor materials

Possible Prior Art

One possible prior art for this technology could be:

  • Light penetration measurement devices used in semiconductor manufacturing processes

Unanswered Questions

How does this technology impact the overall efficiency of semiconductor production processes?

This article does not delve into the specific efficiency gains that may result from implementing this technology.

Are there any limitations to the accuracy of the light intensity detection method described in the patent application?

The article does not address any potential limitations or challenges that may arise in accurately detecting light intensity in semiconductor structures.


Original Abstract Submitted

a method includes directing light at a first side of a semiconductor structure; detecting a first light intensity at a second side of the semiconductor structure, wherein the first light intensity corresponds to the light that penetrated the semiconductor structure from the first side to the second side; and comparing the first light intensity to a second light intensity, wherein the second light intensity corresponds to an expected intensity of light.