Taiwan semiconductor manufacturing co., ltd. (20240128376). METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES simplified abstract
Contents
- 1 METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Shih-Chiang Chen of Taichung City (TW)
Wei-Yang Lee of Taipei City (TW)
Chia-Pin Lin of Hsinchu County (TW)
Yuan-Ching Peng of Hsinchu (TW)
METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128376 titled 'METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES
Simplified Explanation
The patent application describes a device with semiconductor layers suspended over a substrate, connecting two source/drain features, with a dielectric layer and an air gap between the layers.
- The device includes a substrate, source/drain features, semiconductor layers, dielectric layer, and air gap.
- The ratio between the length of the air gap and the thickness of the dielectric layer is between 0.1 to 1.0.
Potential Applications
This technology could be applied in:
- Advanced electronic devices
- High-performance computing systems
Problems Solved
This technology addresses issues related to:
- Improving device performance
- Enhancing signal transmission efficiency
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices
- Reduction in power consumption
Potential Commercial Applications
This technology has potential in various commercial applications such as:
- Semiconductor manufacturing industry
- Electronics and telecommunications sector
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to semiconductor device structures
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This question can be answered through comparative studies and performance testing of the new device against existing structures.
What are the potential challenges in implementing this technology on a large scale for commercial production?
This question can be addressed through feasibility studies and pilot production runs to identify and overcome any challenges in scaling up production.
Original Abstract Submitted
a device a includes a substrate, two source/drain (s/d) features over the substrate, and semiconductor layers suspended over the substrate and connecting the two s/d features. the device further includes a dielectric layer disposed between two adjacent layers of the semiconductor layers and an air gap between the dielectric layer and one of the s/d features, where a ratio between a length of the air gap to a thickness of the first dielectric layer is in a range of 0.1 to 1.0.
