Taiwan semiconductor manufacturing co., ltd. (20240096986). METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD FOR FORMING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR FORMING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR FORMING SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chung-Ting Li of Hsinchu County (TW)
Jen-Hsiang Lu of Taipei City (TW)
Chih-Hao Chang of Hsinchu County (TW)
METHOD FOR FORMING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096986 titled 'METHOD FOR FORMING SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves the formation of gate spacers and interlayer dielectric layers in a semiconductor device manufacturing process. Here are the key points of the innovation:
- Formation of first and second gate spacers on a sidewall of a gate structure
- First gate spacer positioned between second gate spacer and gate structure
- First interlayer dielectric (ILD) layer surrounds gate spacers and gate structure
- Simultaneous removal of portions of second gate spacer and first ILD layer
- Top surface of second gate spacer is lower than top surface of first ILD layer
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, particularly in the fabrication of high-performance transistors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the structure of gate spacers and interlayer dielectric layers.
Benefits
The benefits of this technology include enhanced device performance, increased reliability, and potentially reduced power consumption in semiconductor devices.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of next-generation processors for computers, smartphones, and other electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar gate spacer and interlayer dielectric structures in semiconductor manufacturing processes.
Unanswered Questions
How does this technology compare to existing methods for gate spacer formation in semiconductor devices?
This technology offers a more precise and controlled approach to gate spacer formation, potentially leading to improved device performance and reliability.
What impact could this technology have on the overall cost of semiconductor device manufacturing?
While the initial implementation of this technology may require some adjustments to existing processes, the long-term benefits in terms of device performance and efficiency could outweigh any additional costs.
Original Abstract Submitted
a method includes forming a first gate spacer and a second gate spacer on a sidewall of a first gate structure. the first gate spacer is between the second gate spacer and the first gate structure. a first interlayer dielectric (ild) layer is formed to surround the first gate spacer, the second gate spacer, and the first gate structure. a portion of the second gate spacer and a portion of the first ild layer are removed simultaneously. a top surface of the second gate spacer is lower than a top surface of the first ild layer.
