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Bibliographic details for 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)
- Page name: 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)
- Author: WikiPatents contributors
- Publisher: WikiPatents, .
- Date of last revision: 2 January 2024 11:05 UTC
- Date retrieved: 12 May 2024 00:02 UTC
- Permanent URL: http://wikipatents.org/index.php?title=17554483._STACKED_TRANSISTORS_HAVING_AN_ISOLATION_REGION_THEREBETWEEN_AND_A_COMMON_GATE_ELECTRODE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract_(Samsung_Electronics_Co.,_Ltd.)&oldid=20960
- Page Version ID: 20960
Citation styles for 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)
APA style
17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.). (2024, January 2). WikiPatents, . Retrieved 00:02, May 12, 2024 from http://wikipatents.org/index.php?title=17554483._STACKED_TRANSISTORS_HAVING_AN_ISOLATION_REGION_THEREBETWEEN_AND_A_COMMON_GATE_ELECTRODE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract_(Samsung_Electronics_Co.,_Ltd.)&oldid=20960.
MLA style
"17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)." WikiPatents, . 2 Jan 2024, 11:05 UTC. 12 May 2024, 00:02 <http://wikipatents.org/index.php?title=17554483._STACKED_TRANSISTORS_HAVING_AN_ISOLATION_REGION_THEREBETWEEN_AND_A_COMMON_GATE_ELECTRODE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract_(Samsung_Electronics_Co.,_Ltd.)&oldid=20960>.
MHRA style
WikiPatents contributors, '17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)', WikiPatents, , 2 January 2024, 11:05 UTC, <http://wikipatents.org/index.php?title=17554483._STACKED_TRANSISTORS_HAVING_AN_ISOLATION_REGION_THEREBETWEEN_AND_A_COMMON_GATE_ELECTRODE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract_(Samsung_Electronics_Co.,_Ltd.)&oldid=20960> [accessed 12 May 2024]
Chicago style
WikiPatents contributors, "17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)," WikiPatents, , http://wikipatents.org/index.php?title=17554483._STACKED_TRANSISTORS_HAVING_AN_ISOLATION_REGION_THEREBETWEEN_AND_A_COMMON_GATE_ELECTRODE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract_(Samsung_Electronics_Co.,_Ltd.)&oldid=20960 (accessed May 12, 2024).
CBE/CSE style
WikiPatents contributors. 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.) [Internet]. WikiPatents, ; 2024 Jan 2, 11:05 UTC [cited 2024 May 12]. Available from: http://wikipatents.org/index.php?title=17554483._STACKED_TRANSISTORS_HAVING_AN_ISOLATION_REGION_THEREBETWEEN_AND_A_COMMON_GATE_ELECTRODE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract_(Samsung_Electronics_Co.,_Ltd.)&oldid=20960.
Bluebook style
17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.), http://wikipatents.org/index.php?title=17554483._STACKED_TRANSISTORS_HAVING_AN_ISOLATION_REGION_THEREBETWEEN_AND_A_COMMON_GATE_ELECTRODE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract_(Samsung_Electronics_Co.,_Ltd.)&oldid=20960 (last visited May 12, 2024).
BibTeX entry
@misc{ wiki:xxx, author = "WikiPatents", title = "17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.) --- WikiPatents{,} ", year = "2024", url = "http://wikipatents.org/index.php?title=17554483._STACKED_TRANSISTORS_HAVING_AN_ISOLATION_REGION_THEREBETWEEN_AND_A_COMMON_GATE_ELECTRODE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract_(Samsung_Electronics_Co.,_Ltd.)&oldid=20960", note = "[Online; accessed 12-May-2024]" }
When using the LaTeX package url (\usepackage{url}
somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred:
@misc{ wiki:xxx, author = "WikiPatents", title = "17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.) --- WikiPatents{,} ", year = "2024", url = "\url{http://wikipatents.org/index.php?title=17554483._STACKED_TRANSISTORS_HAVING_AN_ISOLATION_REGION_THEREBETWEEN_AND_A_COMMON_GATE_ELECTRODE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract_(Samsung_Electronics_Co.,_Ltd.)&oldid=20960}", note = "[Online; accessed 12-May-2024]" }