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Bibliographic details for 17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- Page name: 17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- Author: WikiPatents contributors
- Publisher: WikiPatents, .
- Date of last revision: 2 January 2024 04:55 UTC
- Date retrieved: 10 May 2024 15:13 UTC
- Permanent URL: http://wikipatents.org/index.php?title=17461849._Multiple_Gate_Field-Effect_Transistors_Having_Various_Gate_Oxide_Thicknesses_and_Methods_of_Forming_the_Same_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20319
- Page Version ID: 20319
Citation styles for 17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
APA style
17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.). (2024, January 2). WikiPatents, . Retrieved 15:13, May 10, 2024 from http://wikipatents.org/index.php?title=17461849._Multiple_Gate_Field-Effect_Transistors_Having_Various_Gate_Oxide_Thicknesses_and_Methods_of_Forming_the_Same_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20319.
MLA style
"17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)." WikiPatents, . 2 Jan 2024, 04:55 UTC. 10 May 2024, 15:13 <http://wikipatents.org/index.php?title=17461849._Multiple_Gate_Field-Effect_Transistors_Having_Various_Gate_Oxide_Thicknesses_and_Methods_of_Forming_the_Same_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20319>.
MHRA style
WikiPatents contributors, '17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)', WikiPatents, , 2 January 2024, 04:55 UTC, <http://wikipatents.org/index.php?title=17461849._Multiple_Gate_Field-Effect_Transistors_Having_Various_Gate_Oxide_Thicknesses_and_Methods_of_Forming_the_Same_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20319> [accessed 10 May 2024]
Chicago style
WikiPatents contributors, "17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)," WikiPatents, , http://wikipatents.org/index.php?title=17461849._Multiple_Gate_Field-Effect_Transistors_Having_Various_Gate_Oxide_Thicknesses_and_Methods_of_Forming_the_Same_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20319 (accessed May 10, 2024).
CBE/CSE style
WikiPatents contributors. 17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.) [Internet]. WikiPatents, ; 2024 Jan 2, 04:55 UTC [cited 2024 May 10]. Available from: http://wikipatents.org/index.php?title=17461849._Multiple_Gate_Field-Effect_Transistors_Having_Various_Gate_Oxide_Thicknesses_and_Methods_of_Forming_the_Same_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20319.
Bluebook style
17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.), http://wikipatents.org/index.php?title=17461849._Multiple_Gate_Field-Effect_Transistors_Having_Various_Gate_Oxide_Thicknesses_and_Methods_of_Forming_the_Same_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20319 (last visited May 10, 2024).
BibTeX entry
@misc{ wiki:xxx, author = "WikiPatents", title = "17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.) --- WikiPatents{,} ", year = "2024", url = "http://wikipatents.org/index.php?title=17461849._Multiple_Gate_Field-Effect_Transistors_Having_Various_Gate_Oxide_Thicknesses_and_Methods_of_Forming_the_Same_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20319", note = "[Online; accessed 10-May-2024]" }
When using the LaTeX package url (\usepackage{url}
somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred:
@misc{ wiki:xxx, author = "WikiPatents", title = "17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.) --- WikiPatents{,} ", year = "2024", url = "\url{http://wikipatents.org/index.php?title=17461849._Multiple_Gate_Field-Effect_Transistors_Having_Various_Gate_Oxide_Thicknesses_and_Methods_of_Forming_the_Same_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20319}", note = "[Online; accessed 10-May-2024]" }