Sk hynix inc. (20240120275). METAL WIRING OF SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METAL WIRING OF SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METAL WIRING OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METAL WIRING OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seong Ho Choi of Icheon-si (KR)
Chang Man Son of Icheon-si (KR)
METAL WIRING OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120275 titled 'METAL WIRING OF SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a metal wiring structure in a semiconductor device, including a first metal line in a first metal layer with an opening in a first region, and a contact metal passing through a dielectric layer under the first metal layer adjacent to the opening and connected to the first metal line around the opening.
- First metal line in a first metal layer with an opening in a first region
- Contact metal passing through a dielectric layer under the first metal layer adjacent to the opening and connected to the first metal line around the opening
Potential Applications
The technology described in the patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing a more efficient and reliable metal wiring structure.
Benefits
The benefits of this technology include enhanced conductivity, reduced resistance, improved signal transmission, and overall better performance of semiconductor devices.
Potential Commercial Applications
The technology could be utilized in the manufacturing of advanced electronic devices, leading to faster and more efficient products in the market.
Possible Prior Art
One possible prior art could be the use of similar metal wiring structures in previous semiconductor devices to improve performance and reliability.
Unanswered Questions
How does this technology compare to existing metal wiring structures in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing metal wiring structures in semiconductor devices.
What are the specific manufacturing processes involved in implementing this metal wiring structure in semiconductor devices?
The article does not detail the specific manufacturing processes required to implement this metal wiring structure in semiconductor devices.
Original Abstract Submitted
a metal wiring of a semiconductor device may include: a first metal line disposed in a first metal layer, and defined with an opening in a first region; and a contact metal passing through a dielectric layer under the first metal layer adjacent to the opening and connected to the first metal line around the opening.
