Sk hynix inc. (20240119994). VERTICAL MEMORY DEVICE simplified abstract
Contents
- 1 VERTICAL MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL MEMORY DEVICE
Organization Name
Inventor(s)
Seon-Yong Cha of Chungcheongbuk-do (KR)
VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240119994 titled 'VERTICAL MEMORY DEVICE
Simplified Explanation
The memory device described in the abstract includes a first memory cell mat with multi-layer level sub word lines, a second memory cell mat with multi-layer level sub word lines, first and second sub word line driver circuits positioned underneath each memory cell mat, and the sub word line driver circuits positioned underneath the ends of the sub word lines.
- First memory cell mat with multi-layer level sub word lines
- Second memory cell mat with multi-layer level sub word lines
- First sub word line driver circuit positioned underneath the first memory cell mat
- Second sub word line driver circuit positioned underneath the second memory cell mat
- Sub word line driver circuits positioned underneath the ends of the sub word lines
Potential Applications
This technology could be applied in:
- High-speed memory devices
- Data storage systems
- Embedded systems
Problems Solved
This technology helps in:
- Increasing memory access speed
- Enhancing memory density
- Improving overall memory performance
Benefits
The benefits of this technology include:
- Faster data retrieval
- Higher memory capacity
- Improved system efficiency
Potential Commercial Applications
This technology could be used in:
- Smartphones and tablets
- Computers and servers
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be:
- Multi-layer memory cell structures
- Sub word line driver circuits
Unanswered Questions
How does this technology impact power consumption in memory devices?
This article does not address the specific impact of this technology on power consumption in memory devices.
What are the potential limitations of implementing this technology in existing memory systems?
The article does not discuss any potential limitations or challenges that may arise when implementing this technology in current memory systems.
Original Abstract Submitted
a memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.
